Díaz-Reyes, J. (2017). Characterization of highly doped Ga 0.86 In 0.14 As 0.13 Sb0.87 grown by liquid phase epitaxy. Sociedad Mexicana de Física A.C.
Chicago Style (17th ed.) CitationDíaz-Reyes, J. Characterization of Highly Doped Ga 0.86 In 0.14 As 0.13 Sb0.87 Grown by Liquid Phase Epitaxy. Sociedad Mexicana de Física A.C, 2017.
MLA (9th ed.) CitationDíaz-Reyes, J. Characterization of Highly Doped Ga 0.86 In 0.14 As 0.13 Sb0.87 Grown by Liquid Phase Epitaxy. Sociedad Mexicana de Física A.C, 2017.
Warning: These citations may not always be 100% accurate.