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Characterization of highly doped Ga 0.86 In 0.14 As 0.13 Sb0.87 grown by liquid phase epitaxy

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Dettagli Bibliografici
Autore principale:	J. Díaz-Reyes
Natura:	Artículo científico
Lingua:	en
Pubblicazione:	Sociedad Mexicana de Física A.C. 2017
Soggetti:	Física, Astronomía y Matemáticas Raman GaInAsSb semiconductors Liquid phase epitaxy growth Photoluminescence spectroscopy
Accesso online:	Acceder al recurso
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