Subband structure comparison between n- and p-type double delta-doped GaAs quantum wells
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| Natura: | Artículo científico |
| Lingua: | en |
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Sociedad Mexicana de Física A.C.
2004
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| _version_ | 1876479753578348544 |
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| author | I. Rodriguez Vargas |
| author_facet | I. Rodriguez Vargas |
| contents | Subband structure comparison between n- and p-type double delta-doped GaAs quantum wells I. Rodriguez Vargas L.M. Gaggero Sager Física, Astronomía y Matemáticas exchange effects doped quantum wells electron and hole states We compute the electron level structure (n-type) and the hole subband structure (p-type) of double ±-doped GaAs (DDD) quantum wells,considering exchange effects. The Thomas-Fermi (TF), and Thomas-Fermi-Dirac (TFD) approximations have been applied in order todescribe the bending of the conduction and valence band, respectively. The electron and the hole subband structure study indicates thatexchange effects are more important in p-type DDD quantum wells than in n-type DDD. Also our results agree with the experimental dataavailable. 2004 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57050610 en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.Re6 Vol.50 |
| format | Artículo científico |
| id | redalyc_57050610 |
| institution | Redalyc |
| language | en |
| publishDate | 2004 |
| publisher | Sociedad Mexicana de Física A.C. |
| spellingShingle | Subband structure comparison between n- and p-type double delta-doped GaAs quantum wells I. Rodriguez Vargas Física, Astronomía y Matemáticas exchange effects doped quantum wells electron and hole states Subband structure comparison between n- and p-type double delta-doped GaAs quantum wells I. Rodriguez Vargas L.M. Gaggero Sager Física, Astronomía y Matemáticas exchange effects doped quantum wells electron and hole states We compute the electron level structure (n-type) and the hole subband structure (p-type) of double ±-doped GaAs (DDD) quantum wells,considering exchange effects. The Thomas-Fermi (TF), and Thomas-Fermi-Dirac (TFD) approximations have been applied in order todescribe the bending of the conduction and valence band, respectively. The electron and the hole subband structure study indicates thatexchange effects are more important in p-type DDD quantum wells than in n-type DDD. Also our results agree with the experimental dataavailable. 2004 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57050610 en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.Re6 Vol.50 |
| title | Subband structure comparison between n- and p-type double delta-doped GaAs quantum wells |
| topic | Física, Astronomía y Matemáticas exchange effects doped quantum wells electron and hole states |
| url | https://www.redalyc.org/articulo.oa?id=57050610 |