The fundamental absorption edge of CuGa3Te5 ordered defect semiconducting compound
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| Format: | Artículo científico |
| Language: | en |
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Sociedad Mexicana de Física A.C.
2017
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| _version_ | 1876447891491389440 |
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| author | G. Marín |
| author_facet | G. Marín |
| contents | The fundamental absorption edge of CuGa3Te5 ordered defect semiconducting compound G. Marín C. Rincón S.M. Wasim G. Sánchez-Pérez Física, Astronomía y Matemáticas Semiconductors optical absorption electronic band structure The analysis of the temperature variation of the optical absorption spectra of the ordered defect compound CuGa 3 Te 5 , a semiconducting material which crystallizes in a chalcopyrite-related structure with space group P ̄ 4 2c, is made. It has been established that this compound has a direct-allowed band gap between parabolic bands which varies from 1.187 to 1.090 eV in the temperature range from 10 to 300 K. The mean temperature of the phonon involved in the direct band-to-band transition is θ ≈ 125 K. This is comparable with 3/4 θ D ≈ 156 K, θ D being the Debye temperature of the compound. 2017 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57053213014 en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.6 Vol.63 |
| format | Artículo científico |
| id | redalyc_57053213014 |
| institution | Redalyc |
| language | en |
| publishDate | 2017 |
| publisher | Sociedad Mexicana de Física A.C. |
| spellingShingle | The fundamental absorption edge of CuGa3Te5 ordered defect semiconducting compound G. Marín Física, Astronomía y Matemáticas Semiconductors optical absorption electronic band structure The fundamental absorption edge of CuGa3Te5 ordered defect semiconducting compound G. Marín C. Rincón S.M. Wasim G. Sánchez-Pérez Física, Astronomía y Matemáticas Semiconductors optical absorption electronic band structure The analysis of the temperature variation of the optical absorption spectra of the ordered defect compound CuGa 3 Te 5 , a semiconducting material which crystallizes in a chalcopyrite-related structure with space group P ̄ 4 2c, is made. It has been established that this compound has a direct-allowed band gap between parabolic bands which varies from 1.187 to 1.090 eV in the temperature range from 10 to 300 K. The mean temperature of the phonon involved in the direct band-to-band transition is θ ≈ 125 K. This is comparable with 3/4 θ D ≈ 156 K, θ D being the Debye temperature of the compound. 2017 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57053213014 en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.6 Vol.63 |
| title | The fundamental absorption edge of CuGa3Te5 ordered defect semiconducting compound |
| topic | Física, Astronomía y Matemáticas Semiconductors optical absorption electronic band structure |
| url | https://www.redalyc.org/articulo.oa?id=57053213014 |