Growth of AlxGa1¡xAs/GaAs structures for single quantum wells by solid arsenic MOCVD system
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| Format: | Artículo científico |
| Langue: | en |
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Sociedad Mexicana de Física A.C.
2007
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| _version_ | 1876435194488029184 |
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| author | S. Manrique Moreno |
| author_facet | S. Manrique Moreno |
| contents | Growth of AlxGa1¡xAs/GaAs structures for single quantum wells by solid arsenic MOCVD system S. Manrique Moreno R. Castillo Ojeda M. Galván Arellano R. Peña-Sierra Física, Astronomía y Matemáticas III MOCVD V semiconductors optical properties electronic properties The results obtained from the growth and characterization of AlXGa1¡XAs/GaAs multilayer structures by a Metalorganic Chemical VaporDeposition (MOCVD) system based on metallic arsenic are presented. The MOCVD system was adapted in order to be used for thegrowth of quantum wells structures. Our main goal is to explore the capability of this growth system for growing high quality multilayerstructures, including quantum wells. The use of metallic arsenic to replace the hydride group V precursor (AsH3), could introduce importantdifferences into the growth process due to the absence of atomic hydrogen. The main electrical and optical characteristics of both GaAsand AlXGa1¡XAs epilayers to be used for the fabrication of multilayer structures are discussed. The assessment of these epilayers andstructures was carried out using low temperature photoluminescence (PL), Hall effect measurements, X-ray diffraction, Raman spectroscopy,secondary ion mass spectroscopy (SIMS) and Atomic Force Microscopy (AFM). 2007 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57053603 en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.6 Vol.53 |
| format | Artículo científico |
| id | redalyc_57053603 |
| institution | Redalyc |
| language | en |
| publishDate | 2007 |
| publisher | Sociedad Mexicana de Física A.C. |
| spellingShingle | Growth of AlxGa1¡xAs/GaAs structures for single quantum wells by solid arsenic MOCVD system S. Manrique Moreno Física, Astronomía y Matemáticas III MOCVD V semiconductors optical properties electronic properties Growth of AlxGa1¡xAs/GaAs structures for single quantum wells by solid arsenic MOCVD system S. Manrique Moreno R. Castillo Ojeda M. Galván Arellano R. Peña-Sierra Física, Astronomía y Matemáticas III MOCVD V semiconductors optical properties electronic properties The results obtained from the growth and characterization of AlXGa1¡XAs/GaAs multilayer structures by a Metalorganic Chemical VaporDeposition (MOCVD) system based on metallic arsenic are presented. The MOCVD system was adapted in order to be used for thegrowth of quantum wells structures. Our main goal is to explore the capability of this growth system for growing high quality multilayerstructures, including quantum wells. The use of metallic arsenic to replace the hydride group V precursor (AsH3), could introduce importantdifferences into the growth process due to the absence of atomic hydrogen. The main electrical and optical characteristics of both GaAsand AlXGa1¡XAs epilayers to be used for the fabrication of multilayer structures are discussed. The assessment of these epilayers andstructures was carried out using low temperature photoluminescence (PL), Hall effect measurements, X-ray diffraction, Raman spectroscopy,secondary ion mass spectroscopy (SIMS) and Atomic Force Microscopy (AFM). 2007 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57053603 en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.6 Vol.53 |
| title | Growth of AlxGa1¡xAs/GaAs structures for single quantum wells by solid arsenic MOCVD system |
| topic | Física, Astronomía y Matemáticas III MOCVD V semiconductors optical properties electronic properties |
| url | https://www.redalyc.org/articulo.oa?id=57053603 |