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| Format: | Artículo científico |
| Language: | en |
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Sociedad Mexicana de Física A.C.
2007
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| Online Access: | https://www.redalyc.org/articulo.oa?id=57053607 |
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| _version_ | 1866558466619867136 |
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| author | S.T. Pérez-Merchancano |
| author_facet | S.T. Pérez-Merchancano |
| contents | The binding energy of donor impurities in GaAs quantum dots under the pressure effect S.T. Pérez-Merchancano L.E. Bolivar-Marinez J. Silva-Valencia Física, Astronomía y Matemáticas impurity Quantum dot hydrostatic pressure Calculations of the binding energy of an on-center and off-center shallow hydrogenic impurity in a GaAs quantum dot under hydrostaticpressure are presented. The variational approach within the effective mass approximation is used as the framework for this calculation. Theeffect of the pressure is to exert an additional confinement on the impurity inside the dot; therefore the binding energy increases for any dotradius and impurity position. We also found that the binding energy depends on the location of the impurity and the pressure effects are lesspronounced for impurities on the edge. 2007 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57053607 en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.6 Vol.53 |
| format | Artículo científico |
| id | redalyc_57053607 |
| language | en |
| publishDate | 2007 |
| publisher | Sociedad Mexicana de Física A.C. |
| spellingShingle | The binding energy of donor impurities in GaAs quantum dots under the pressure effect S.T. Pérez-Merchancano Física, Astronomía y Matemáticas impurity Quantum dot hydrostatic pressure The binding energy of donor impurities in GaAs quantum dots under the pressure effect S.T. Pérez-Merchancano L.E. Bolivar-Marinez J. Silva-Valencia Física, Astronomía y Matemáticas impurity Quantum dot hydrostatic pressure Calculations of the binding energy of an on-center and off-center shallow hydrogenic impurity in a GaAs quantum dot under hydrostaticpressure are presented. The variational approach within the effective mass approximation is used as the framework for this calculation. Theeffect of the pressure is to exert an additional confinement on the impurity inside the dot; therefore the binding energy increases for any dotradius and impurity position. We also found that the binding energy depends on the location of the impurity and the pressure effects are lesspronounced for impurities on the edge. 2007 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57053607 en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.6 Vol.53 |
| title | The binding energy of donor impurities in GaAs quantum dots under the pressure effect |
| topic | Física, Astronomía y Matemáticas impurity Quantum dot hydrostatic pressure |
| url | https://www.redalyc.org/articulo.oa?id=57053607 |