A low-temperature and seedless method for producing hydrogen-free Si3N4

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Autore principale: A.L. Leal-Cruz
Natura: Artículo científico
Lingua:en
Pubblicazione: Sociedad Mexicana de Física A.C. 2008
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author A.L. Leal-Cruz
author_facet A.L. Leal-Cruz
contents A low-temperature and seedless method for producing hydrogen-free Si3N4 A.L. Leal-Cruz M.I. Pech-Canul J.L. de la Peña Física, Astronomía y Matemáticas CVD gas and ¯ Si3N4 Thermodynamics A simple, seedless method for the synthesis of Si3N4 from a hydrogen-free precursor system (Na2SiF6(s)-N2(g)) was developed. Fromthermodynamic calculations and experimental results it is concluded that the gaseous chemical species SiFx (SiF4,SiF3, SiF2, SiF and Si)formed during the low-temperature dissociation of Na2SiF6 in a conventional CVD system react in-situ with nitrogen to produce Si3N4.Whiskers, fibers, coatings and powders were obtained via the Na2SiF6-N2 system at pressures slightly above atmospheric pressure. Notonly does the feasibility of the reactions for Na2SiF6 dissociation and Si3N4 formation increase with the temperature but also, once the SiFxchemical species are formed by the former, the latter reaction is even more viable. Amorphous Si3N4 is obtained at temperatures of up to1173 K while crystalline ®- and ¯-Si3N4 are formed in the range 1273-1573 K and with processing times as short as 120 minutes. Optimalconditions for maximizing Si3N4formation were determined 2008 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57054305 en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.3 Vol.54
format Artículo científico
id redalyc_57054305
institution Redalyc
language en
publishDate 2008
publisher Sociedad Mexicana de Física A.C.
spellingShingle A low-temperature and seedless method for producing hydrogen-free Si3N4
A.L. Leal-Cruz
Física, Astronomía y Matemáticas
CVD
gas
and ¯
Si3N4
Thermodynamics
A low-temperature and seedless method for producing hydrogen-free Si3N4 A.L. Leal-Cruz M.I. Pech-Canul J.L. de la Peña Física, Astronomía y Matemáticas CVD gas and ¯ Si3N4 Thermodynamics A simple, seedless method for the synthesis of Si3N4 from a hydrogen-free precursor system (Na2SiF6(s)-N2(g)) was developed. Fromthermodynamic calculations and experimental results it is concluded that the gaseous chemical species SiFx (SiF4,SiF3, SiF2, SiF and Si)formed during the low-temperature dissociation of Na2SiF6 in a conventional CVD system react in-situ with nitrogen to produce Si3N4.Whiskers, fibers, coatings and powders were obtained via the Na2SiF6-N2 system at pressures slightly above atmospheric pressure. Notonly does the feasibility of the reactions for Na2SiF6 dissociation and Si3N4 formation increase with the temperature but also, once the SiFxchemical species are formed by the former, the latter reaction is even more viable. Amorphous Si3N4 is obtained at temperatures of up to1173 K while crystalline ®- and ¯-Si3N4 are formed in the range 1273-1573 K and with processing times as short as 120 minutes. Optimalconditions for maximizing Si3N4formation were determined 2008 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57054305 en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.3 Vol.54
title A low-temperature and seedless method for producing hydrogen-free Si3N4
topic Física, Astronomía y Matemáticas
CVD
gas
and ¯
Si3N4
Thermodynamics
url https://www.redalyc.org/articulo.oa?id=57054305