Influence of baking on the photoluminescence spectra of In1-x GaxAsyP1-y solid solutions grown on Inp substrates
Fuente:
Redalyc
Salvato in:
| Autore principale: | |
|---|---|
| Natura: | Artículo científico |
| Lingua: | en |
| Pubblicazione: |
Sociedad Mexicana de Física A.C.
2004
|
| Soggetti: | |
| Accesso online: | |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
|
| _version_ | 1876474565006196736 |
|---|---|
| author | V.A. Mishurnyi |
| author_facet | V.A. Mishurnyi |
| contents | Influence of baking on the photoluminescence spectra of In1-x GaxAsyP1-y solid solutions grown on Inp substrates V.A. Mishurnyi A. Yu. Gorbatchev F. De Anda J. Nieto Navarro Física, Astronomía y Matemáticas InGaAsP solid solution miscibility gap decomposition and photoluminescence The influence of thermal treatments on the photoluminescence spectra of In1¡xGaxAsyP1¡yepitaxial layers of various compositions grownby LPE on InP substrates has been studied. To prevent the epitaxial layers from degradation, due to phosphor evaporation during the baking,their surface was covered by spin-on SiO2 layers. The photoluminescence spectra did not change for solid solutions whose compositionswere near InP and InGaAs. For compositions in the middle of the lattice-matched region, the variations were very noticeable because theappearance of additional peaks in the luminescence spectra. This could be related to the decomposition of those solid solutions whosecompositions lie inside a theoretically predicted miscibility gap. 2004 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57062702 en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.Re3 Vol.50 |
| format | Artículo científico |
| id | redalyc_57062702 |
| institution | Redalyc |
| language | en |
| publishDate | 2004 |
| publisher | Sociedad Mexicana de Física A.C. |
| spellingShingle | Influence of baking on the photoluminescence spectra of In1-x GaxAsyP1-y solid solutions grown on Inp substrates V.A. Mishurnyi Física, Astronomía y Matemáticas InGaAsP solid solution miscibility gap decomposition and photoluminescence Influence of baking on the photoluminescence spectra of In1-x GaxAsyP1-y solid solutions grown on Inp substrates V.A. Mishurnyi A. Yu. Gorbatchev F. De Anda J. Nieto Navarro Física, Astronomía y Matemáticas InGaAsP solid solution miscibility gap decomposition and photoluminescence The influence of thermal treatments on the photoluminescence spectra of In1¡xGaxAsyP1¡yepitaxial layers of various compositions grownby LPE on InP substrates has been studied. To prevent the epitaxial layers from degradation, due to phosphor evaporation during the baking,their surface was covered by spin-on SiO2 layers. The photoluminescence spectra did not change for solid solutions whose compositionswere near InP and InGaAs. For compositions in the middle of the lattice-matched region, the variations were very noticeable because theappearance of additional peaks in the luminescence spectra. This could be related to the decomposition of those solid solutions whosecompositions lie inside a theoretically predicted miscibility gap. 2004 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57062702 en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.Re3 Vol.50 |
| title | Influence of baking on the photoluminescence spectra of In1-x GaxAsyP1-y solid solutions grown on Inp substrates |
| topic | Física, Astronomía y Matemáticas InGaAsP solid solution miscibility gap decomposition and photoluminescence |
| url | https://www.redalyc.org/articulo.oa?id=57062702 |