Electronic and optical properties of InAs(110)
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| Format: | Artículo científico |
| Sprache: | en |
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Sociedad Mexicana de Física A.C.
2005
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| _version_ | 1876457391358214144 |
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| author | X. López-Lozano |
| author_facet | X. López-Lozano |
| contents | Electronic and optical properties of InAs(110) X. López-Lozano C. Noguez L. Meza-Montes Física, Astronomía y Matemáticas III V surface surface states indium arsenide semiconductor surface The electronic and optical properties of the cleavage InAs(110) surface are studied using a semi-empirical tight-binding method which employs an extended, atomic-like, basis set. The surface electronic states are discussed in terms of their electronic character, and compared with other theoretical approaches, and experimental observations. The surface electronic band structure and the Reflectance Anisotropy Spectrum (RAS) are calculated and discussed in terms of the surface electronic states and the atomic structure of the surface. 2005 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57063809 en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.2 Vol.51 |
| format | Artículo científico |
| id | redalyc_57063809 |
| institution | Redalyc |
| language | en |
| publishDate | 2005 |
| publisher | Sociedad Mexicana de Física A.C. |
| spellingShingle | Electronic and optical properties of InAs(110) X. López-Lozano Física, Astronomía y Matemáticas III V surface surface states indium arsenide semiconductor surface Electronic and optical properties of InAs(110) X. López-Lozano C. Noguez L. Meza-Montes Física, Astronomía y Matemáticas III V surface surface states indium arsenide semiconductor surface The electronic and optical properties of the cleavage InAs(110) surface are studied using a semi-empirical tight-binding method which employs an extended, atomic-like, basis set. The surface electronic states are discussed in terms of their electronic character, and compared with other theoretical approaches, and experimental observations. The surface electronic band structure and the Reflectance Anisotropy Spectrum (RAS) are calculated and discussed in terms of the surface electronic states and the atomic structure of the surface. 2005 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57063809 en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.2 Vol.51 |
| title | Electronic and optical properties of InAs(110) |
| topic | Física, Astronomía y Matemáticas III V surface surface states indium arsenide semiconductor surface |
| url | https://www.redalyc.org/articulo.oa?id=57063809 |