Influence of the carrier gas in the growth kinetics of TiO2 films deposited by aerosol assisted chemical vapor deposition with titanium-diisopropoxide as precursor
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| Format: | Artículo científico |
| Sprache: | en |
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Sociedad Mexicana de Física A.C.
2006
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| _version_ | 1876477708003704832 |
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| author | M. Guerrero |
| author_facet | M. Guerrero |
| contents | Influence of the carrier gas in the growth kinetics of TiO2 films deposited by aerosol assisted chemical vapor deposition with titanium-diisopropoxide as precursor M. Guerrero A. Conde-Gallardo A. B Soto R. Fragoso N. Castillo Física, Astronomía y Matemáticas metal TiO2 films spray pyrolysis Growth mechanisms organic chemical vapor deposition Titanium dioxide thin films were deposited on crystalline silicon (100) substrates by delivering a liquid aerosol of titanium-diisopropoxideand by using oxygen and nitrogen as carrier gases. The crystalline and morphological features indicate that the films are deposited by ametal organic chemical vapor deposition process. This is strongly supported by the behavior of the growth rate rg as a function of thedeposition temperature, which indicates that the film formation is limited by both, the diffusion in gas phase of the precursor species to thesurface substrate and reaction of those species at that surface. Even though the rg line shape does not depend on the kind of carrier gasused to transport the aerosol, its absolute value and the activation energy EA that characterizes the surface reaction do. A fitting procedureto an equation that takes into account both limiting mechanisms (gas phase diffusion and surface reaction) yields: EA »=26.4 kJ/mol orEA=21.4 kJ/mol when oxygen or nitrogen is employed as carrier gas, respectively 2006 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57065312 en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.5 Vol.52 |
| format | Artículo científico |
| id | redalyc_57065312 |
| institution | Redalyc |
| language | en |
| publishDate | 2006 |
| publisher | Sociedad Mexicana de Física A.C. |
| spellingShingle | Influence of the carrier gas in the growth kinetics of TiO2 films deposited by aerosol assisted chemical vapor deposition with titanium-diisopropoxide as precursor M. Guerrero Física, Astronomía y Matemáticas metal TiO2 films spray pyrolysis Growth mechanisms organic chemical vapor deposition Influence of the carrier gas in the growth kinetics of TiO2 films deposited by aerosol assisted chemical vapor deposition with titanium-diisopropoxide as precursor M. Guerrero A. Conde-Gallardo A. B Soto R. Fragoso N. Castillo Física, Astronomía y Matemáticas metal TiO2 films spray pyrolysis Growth mechanisms organic chemical vapor deposition Titanium dioxide thin films were deposited on crystalline silicon (100) substrates by delivering a liquid aerosol of titanium-diisopropoxideand by using oxygen and nitrogen as carrier gases. The crystalline and morphological features indicate that the films are deposited by ametal organic chemical vapor deposition process. This is strongly supported by the behavior of the growth rate rg as a function of thedeposition temperature, which indicates that the film formation is limited by both, the diffusion in gas phase of the precursor species to thesurface substrate and reaction of those species at that surface. Even though the rg line shape does not depend on the kind of carrier gasused to transport the aerosol, its absolute value and the activation energy EA that characterizes the surface reaction do. A fitting procedureto an equation that takes into account both limiting mechanisms (gas phase diffusion and surface reaction) yields: EA »=26.4 kJ/mol orEA=21.4 kJ/mol when oxygen or nitrogen is employed as carrier gas, respectively 2006 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57065312 en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.5 Vol.52 |
| title | Influence of the carrier gas in the growth kinetics of TiO2 films deposited by aerosol assisted chemical vapor deposition with titanium-diisopropoxide as precursor |
| topic | Física, Astronomía y Matemáticas metal TiO2 films spray pyrolysis Growth mechanisms organic chemical vapor deposition |
| url | https://www.redalyc.org/articulo.oa?id=57065312 |