Fabrication of low temperature poly-Si thin film transistor using field aided lateral crystallization process
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| Format: | Artículo científico |
| Language: | en |
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Sociedad Mexicana de Física A.C.
2007
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| _version_ | 1876488941091160064 |
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| author | Hyun-woong Chang |
| author_facet | Hyun-woong Chang |
| contents | Fabrication of low temperature poly-Si thin film transistor using field aided lateral crystallization process Hyun-woong Chang Hyun-chul Kim Young-Bae Kim Yu-hang Wang Duck-Kyun Choi Física, Astronomía y Matemáticas Ni catalyst low temperature crystallization Field aided lateral crystallization polycrystalline silicon thin film transistors Polycrystalline silicon thin film transistors (poly-Si TFTs) for LCD application were fabricated on glass substrate using the field-aided lateralcrystallization (FALC) process. The crystallization of amorphous silicon (a-Si) was significantly enhanced when the electric field of 100V/cmwas applied to selectively Ni-deposited a-Si film during thermal annealing at 500± in N2 ambient for 5 hrs. The channel of the transistorswas directionally crystallized from the negatively biased electrode side. The field-effect mobility of the fabricated poly-Si TFTs was about200.5 cm2/V-s. Therefore, the possibility of high-performance and low-temperature (<500±) poly-Si TFTs was demonstrated by using theNi-FALC process. 2007 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57066102 https://www.redalyc.org/journal/570/57066102/ https://www.redalyc.org/journal/570/57066102/html/ https://www.redalyc.org/journal/570/57066102/57066102.epub https://www.redalyc.org/journal/570/57066102/movil en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.1 Vol.53 |
| format | Artículo científico |
| id | redalyc_57066102 |
| institution | Redalyc |
| language | en |
| publishDate | 2007 |
| publisher | Sociedad Mexicana de Física A.C. |
| spellingShingle | Fabrication of low temperature poly-Si thin film transistor using field aided lateral crystallization process Hyun-woong Chang Física, Astronomía y Matemáticas Ni catalyst low temperature crystallization Field aided lateral crystallization polycrystalline silicon thin film transistors Fabrication of low temperature poly-Si thin film transistor using field aided lateral crystallization process Hyun-woong Chang Hyun-chul Kim Young-Bae Kim Yu-hang Wang Duck-Kyun Choi Física, Astronomía y Matemáticas Ni catalyst low temperature crystallization Field aided lateral crystallization polycrystalline silicon thin film transistors Polycrystalline silicon thin film transistors (poly-Si TFTs) for LCD application were fabricated on glass substrate using the field-aided lateralcrystallization (FALC) process. The crystallization of amorphous silicon (a-Si) was significantly enhanced when the electric field of 100V/cmwas applied to selectively Ni-deposited a-Si film during thermal annealing at 500± in N2 ambient for 5 hrs. The channel of the transistorswas directionally crystallized from the negatively biased electrode side. The field-effect mobility of the fabricated poly-Si TFTs was about200.5 cm2/V-s. Therefore, the possibility of high-performance and low-temperature (<500±) poly-Si TFTs was demonstrated by using theNi-FALC process. 2007 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57066102 https://www.redalyc.org/journal/570/57066102/ https://www.redalyc.org/journal/570/57066102/html/ https://www.redalyc.org/journal/570/57066102/57066102.epub https://www.redalyc.org/journal/570/57066102/movil en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.1 Vol.53 |
| title | Fabrication of low temperature poly-Si thin film transistor using field aided lateral crystallization process |
| topic | Física, Astronomía y Matemáticas Ni catalyst low temperature crystallization Field aided lateral crystallization polycrystalline silicon thin film transistors |
| url | https://www.redalyc.org/articulo.oa?id=57066102 https://www.redalyc.org/journal/570/57066102/ https://www.redalyc.org/journal/570/57066102/html/ https://www.redalyc.org/journal/570/57066102/57066102.epub https://www.redalyc.org/journal/570/57066102/movil |