CuxS back contact for CdTe solar cells
Fuente:
Redalyc
Salvato in:
| Autore principale: | |
|---|---|
| Natura: | Artículo científico |
| Lingua: | en |
| Pubblicazione: |
Sociedad Mexicana de Física A.C.
2007
|
| Soggetti: | |
| Accesso online: | |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
|
| _version_ | 1876489266184323072 |
|---|---|
| author | Donghwan Kim |
| author_facet | Donghwan Kim |
| contents | CuxS back contact for CdTe solar cells Donghwan Kim B.E. McCandless S.S. Hegedus R.W. Birkmire Física, Astronomía y Matemáticas solar cells Copper sulfide cadmium telluride contact resistance Copper sulfide (CuxS) films were studied as a back contact material for CdTe solar cells. The CuxS films were made by chemical bathdeposition in aqueous solution. Annealing at 200±C in Ar improved the performance of the solar cells. Using the CdS/CdTe/CuxS/Cstructure, an open-circuit voltage (Voc) higher than 840 mV and an energy conversion efficiency higher than 11% were obtained. 2007 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57066103 https://www.redalyc.org/journal/570/57066103/ https://www.redalyc.org/journal/570/57066103/html/ https://www.redalyc.org/journal/570/57066103/57066103.epub https://www.redalyc.org/journal/570/57066103/movil en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.1 Vol.53 |
| format | Artículo científico |
| id | redalyc_57066103 |
| institution | Redalyc |
| language | en |
| publishDate | 2007 |
| publisher | Sociedad Mexicana de Física A.C. |
| spellingShingle | CuxS back contact for CdTe solar cells Donghwan Kim Física, Astronomía y Matemáticas solar cells Copper sulfide cadmium telluride contact resistance CuxS back contact for CdTe solar cells Donghwan Kim B.E. McCandless S.S. Hegedus R.W. Birkmire Física, Astronomía y Matemáticas solar cells Copper sulfide cadmium telluride contact resistance Copper sulfide (CuxS) films were studied as a back contact material for CdTe solar cells. The CuxS films were made by chemical bathdeposition in aqueous solution. Annealing at 200±C in Ar improved the performance of the solar cells. Using the CdS/CdTe/CuxS/Cstructure, an open-circuit voltage (Voc) higher than 840 mV and an energy conversion efficiency higher than 11% were obtained. 2007 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57066103 https://www.redalyc.org/journal/570/57066103/ https://www.redalyc.org/journal/570/57066103/html/ https://www.redalyc.org/journal/570/57066103/57066103.epub https://www.redalyc.org/journal/570/57066103/movil en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.1 Vol.53 |
| title | CuxS back contact for CdTe solar cells |
| topic | Física, Astronomía y Matemáticas solar cells Copper sulfide cadmium telluride contact resistance |
| url | https://www.redalyc.org/articulo.oa?id=57066103 https://www.redalyc.org/journal/570/57066103/ https://www.redalyc.org/journal/570/57066103/html/ https://www.redalyc.org/journal/570/57066103/57066103.epub https://www.redalyc.org/journal/570/57066103/movil |