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Bibliographic Details
Main Author: Donghwan Kim
Format: Artículo científico
Language:en
Published: Sociedad Mexicana de Física A.C. 2007
Subjects:
Online Access:https://www.redalyc.org/articulo.oa?id=57066103
https://www.redalyc.org/journal/570/57066103/
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author Donghwan Kim
author_facet Donghwan Kim
contents CuxS back contact for CdTe solar cells Donghwan Kim B.E. McCandless S.S. Hegedus R.W. Birkmire Física, Astronomía y Matemáticas solar cells Copper sulfide cadmium telluride contact resistance Copper sulfide (CuxS) films were studied as a back contact material for CdTe solar cells. The CuxS films were made by chemical bathdeposition in aqueous solution. Annealing at 200±C in Ar improved the performance of the solar cells. Using the CdS/CdTe/CuxS/Cstructure, an open-circuit voltage (Voc) higher than 840 mV and an energy conversion efficiency higher than 11% were obtained. 2007 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57066103 https://www.redalyc.org/journal/570/57066103/ https://www.redalyc.org/journal/570/57066103/html/ https://www.redalyc.org/journal/570/57066103/57066103.epub https://www.redalyc.org/journal/570/57066103/movil en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.1 Vol.53
format Artículo científico
id redalyc_57066103
language en
publishDate 2007
publisher Sociedad Mexicana de Física A.C.
spellingShingle CuxS back contact for CdTe solar cells
Donghwan Kim
Física, Astronomía y Matemáticas
solar cells
Copper sulfide
cadmium telluride
contact resistance
CuxS back contact for CdTe solar cells Donghwan Kim B.E. McCandless S.S. Hegedus R.W. Birkmire Física, Astronomía y Matemáticas solar cells Copper sulfide cadmium telluride contact resistance Copper sulfide (CuxS) films were studied as a back contact material for CdTe solar cells. The CuxS films were made by chemical bathdeposition in aqueous solution. Annealing at 200±C in Ar improved the performance of the solar cells. Using the CdS/CdTe/CuxS/Cstructure, an open-circuit voltage (Voc) higher than 840 mV and an energy conversion efficiency higher than 11% were obtained. 2007 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57066103 https://www.redalyc.org/journal/570/57066103/ https://www.redalyc.org/journal/570/57066103/html/ https://www.redalyc.org/journal/570/57066103/57066103.epub https://www.redalyc.org/journal/570/57066103/movil en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.1 Vol.53
title CuxS back contact for CdTe solar cells
topic Física, Astronomía y Matemáticas
solar cells
Copper sulfide
cadmium telluride
contact resistance
url https://www.redalyc.org/articulo.oa?id=57066103
https://www.redalyc.org/journal/570/57066103/
https://www.redalyc.org/journal/570/57066103/html/
https://www.redalyc.org/journal/570/57066103/57066103.epub
https://www.redalyc.org/journal/570/57066103/movil