Optical properties of Er-doped GaN
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| Format: | Artículo científico |
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Sociedad Mexicana de Física A.C.
2007
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| _version_ | 1876453066663788544 |
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| author | Akihiro Wakahara |
| author_facet | Akihiro Wakahara |
| contents | Optical properties of Er-doped GaN Akihiro Wakahara Chang-Sik Son In-Hoon Choi Seong-Il Kim Yong Tae Kim H. Castañeda López Young-Hwan Kim Física, Astronomía y Matemáticas Er GaN implantation photoluminescence Optical properties of Er (Erbium)-doped GaN epilayers have been investigated using photoluminescence (PL). Various doses of Er ionswere implanted on GaN epilayers by ion implantation. Sharp visible green emission lines due to inner 4f shell transitions for Er3+ wereobserved from the PL spectrum of Er-implanted GaN. The emission spectrum consists of two narrow green lines at 537 and 558 nm. Thegreen emission lines are identified as Er3+ transitions from the 5H11=2 and 4S3=2 levels to the 4I15=2 ground state. The stronger peaks in the5£1014 cm¡2 sample, together with the relatively higher intensity of the Er3+ luminescence in the lower doped sample, imply that somedamage remains in the 1£1015 cm¡2 sample. The peak positions of emission lines due to inner 4f shell transitions for Er3+ do not changewith increasing temperature. This indicates that Er3+ related emission depends very little on the ambient temperature. 2007 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57066104 https://www.redalyc.org/journal/570/57066104/ https://www.redalyc.org/journal/570/57066104/html/ https://www.redalyc.org/journal/570/57066104/57066104.epub https://www.redalyc.org/journal/570/57066104/movil en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.1 Vol.53 |
| format | Artículo científico |
| id | redalyc_57066104 |
| institution | Redalyc |
| language | en |
| publishDate | 2007 |
| publisher | Sociedad Mexicana de Física A.C. |
| spellingShingle | Optical properties of Er-doped GaN Akihiro Wakahara Física, Astronomía y Matemáticas Er GaN implantation photoluminescence Optical properties of Er-doped GaN Akihiro Wakahara Chang-Sik Son In-Hoon Choi Seong-Il Kim Yong Tae Kim H. Castañeda López Young-Hwan Kim Física, Astronomía y Matemáticas Er GaN implantation photoluminescence Optical properties of Er (Erbium)-doped GaN epilayers have been investigated using photoluminescence (PL). Various doses of Er ionswere implanted on GaN epilayers by ion implantation. Sharp visible green emission lines due to inner 4f shell transitions for Er3+ wereobserved from the PL spectrum of Er-implanted GaN. The emission spectrum consists of two narrow green lines at 537 and 558 nm. Thegreen emission lines are identified as Er3+ transitions from the 5H11=2 and 4S3=2 levels to the 4I15=2 ground state. The stronger peaks in the5£1014 cm¡2 sample, together with the relatively higher intensity of the Er3+ luminescence in the lower doped sample, imply that somedamage remains in the 1£1015 cm¡2 sample. The peak positions of emission lines due to inner 4f shell transitions for Er3+ do not changewith increasing temperature. This indicates that Er3+ related emission depends very little on the ambient temperature. 2007 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57066104 https://www.redalyc.org/journal/570/57066104/ https://www.redalyc.org/journal/570/57066104/html/ https://www.redalyc.org/journal/570/57066104/57066104.epub https://www.redalyc.org/journal/570/57066104/movil en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.1 Vol.53 |
| title | Optical properties of Er-doped GaN |
| topic | Física, Astronomía y Matemáticas Er GaN implantation photoluminescence |
| url | https://www.redalyc.org/articulo.oa?id=57066104 https://www.redalyc.org/journal/570/57066104/ https://www.redalyc.org/journal/570/57066104/html/ https://www.redalyc.org/journal/570/57066104/57066104.epub https://www.redalyc.org/journal/570/57066104/movil |