Saved in:
| Main Author: | |
|---|---|
| Format: | Artículo científico |
| Language: | en |
| Published: |
Sociedad Mexicana de Física A.C.
2019
|
| Subjects: | |
| Online Access: | https://www.redalyc.org/articulo.oa?id=57082922005 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Table of Contents:
- Physical properties of reactive RF sputtered a-IZON thin films P. Castillo-Castillo P. D. Arjona-Villicaña J. Acosta-Elias Física, Astronomía y Matemáticas IZON amorphous oxynitride spectral ellipsometry Indium zinc oxynitride amorphous semiconductor The physical properties of amorphous indium zinc oxynitride (a-IZON) thin films, which were deposited at room temperature by reactive RF magnetron sputtering, were investigated. The results of the investigations indicated that the a-IZON films possessed excellent qualities: high transparency with a very low resistivity from 10−3 Ω·cm to 10−4 Ω·cm, while the carrier concentration showed values over 1020 cm−3 with mobility between 10 and 21 cm2 ·V −1 ·s −1 . The incorporated nitrogen reduces the typical crystallization of IZO and favors the deposition of transparent thin films. These results show that the IZON is an ideal amorphous material for applications in transparent and flexible optoelectronic devices. 2019 artículo científico 0035-001X https://www.redalyc.org/articulo.oa?id=57082922005 en http://www.redalyc.org/revista.oa?id=570 Revista Mexicana de Física application/pdf Sociedad Mexicana de Física A.C. Revista Mexicana de Física (México) Num.2 Vol.65