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Extraction of the extrinsic base resistance of SiGe: C HBTs at 300 K and at 40 K

Fuente: Redalyc

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Detalles Bibliográficos
Autor principal:	Eloy Ramírez-García
Formato:	Artículo científico
Lenguaje:	en
Publicado:	Instituto Politécnico Nacional 2015
Materias:	Ingeniería Apparent base resistance intrinsic base resistance extrinsic base resistance heterojunction bipolar transtistors
Acceso en línea:	Acceder al recurso
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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