A circuit model for the post-breakdown I-V characteristics in MOS devices on P-type substrate
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| Format: | Artículo científico |
| Langue: | en |
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Universidad de Carabobo
2007
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| _version_ | 1876435185524801536 |
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| author | A. Ortiz-Conde |
| author_facet | A. Ortiz-Conde |
| contents | A circuit model for the post-breakdown I-V characteristics in MOS devices on P-type substrate A. Ortiz-Conde E. Miranda F. J. García Sanchez E. Farkas S. Malobabic Ingeniería metal oxide reliability semiconductor Oxide breakdown The post-breakdown leakage current in MOS p-silicon devices cannot be modeled with a single-diode and a series resistance for the complete range because of the complex shape of its logarithmic plot. For low voltage, the current can be described by a single-diode model and a series resistance, and for high voltage a different singlediode model and a resistance can be used. These two regional single-diode models are combined in a double diode model with two resistances. 2007 artículo científico 1316-6832 https://www.redalyc.org/articulo.oa?id=70711528010 en http://www.redalyc.org/revista.oa?id=707 Revista INGENIERÍA UC application/pdf Universidad de Carabobo Revista INGENIERÍA UC (República Bolivariana de Venezuela) Num.2 Vol.14 |
| format | Artículo científico |
| id | redalyc_70711528010 |
| institution | Redalyc |
| language | en |
| publishDate | 2007 |
| publisher | Universidad de Carabobo |
| spellingShingle | A circuit model for the post-breakdown I-V characteristics in MOS devices on P-type substrate A. Ortiz-Conde Ingeniería metal oxide reliability semiconductor Oxide breakdown A circuit model for the post-breakdown I-V characteristics in MOS devices on P-type substrate A. Ortiz-Conde E. Miranda F. J. García Sanchez E. Farkas S. Malobabic Ingeniería metal oxide reliability semiconductor Oxide breakdown The post-breakdown leakage current in MOS p-silicon devices cannot be modeled with a single-diode and a series resistance for the complete range because of the complex shape of its logarithmic plot. For low voltage, the current can be described by a single-diode model and a series resistance, and for high voltage a different singlediode model and a resistance can be used. These two regional single-diode models are combined in a double diode model with two resistances. 2007 artículo científico 1316-6832 https://www.redalyc.org/articulo.oa?id=70711528010 en http://www.redalyc.org/revista.oa?id=707 Revista INGENIERÍA UC application/pdf Universidad de Carabobo Revista INGENIERÍA UC (República Bolivariana de Venezuela) Num.2 Vol.14 |
| title | A circuit model for the post-breakdown I-V characteristics in MOS devices on P-type substrate |
| topic | Ingeniería metal oxide reliability semiconductor Oxide breakdown |
| url | https://www.redalyc.org/articulo.oa?id=70711528010 |