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A circuit model for the post-breakdown I-V characteristics in MOS devices on P-type substrate

Fuente: Redalyc

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Detalles Bibliográficos
Autor principal:	A. Ortiz-Conde
Formato:	Artículo científico
Lenguaje:	en
Publicado:	Universidad de Carabobo 2007
Materias:	Ingeniería metal oxide reliability semiconductor Oxide breakdown
Acceso en línea:	Acceder al recurso
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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