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| Format: | Artículo científico |
| Language: | en |
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Sociedade Brasileira de Proteção Radiológica - SBPR
2021
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| Online Access: | https://www.redalyc.org/articulo.oa?id=722280970013 |
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| _version_ | 1866815273613393920 |
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| author | C. Daruich de Souza |
| author_facet | C. Daruich de Souza |
| contents | The basics of radiation damage in crystalline silicon networks by NIEL C. Daruich de Souza J. B Kim J. J Kim J. Kim W. Ji K. J. Son S. M Choi G. J Kang J. T Hong Biología Non NIEL diodes silicon radiation damage Basically, radiation can cause two effects on materials: ionization and non-ionization. This work presented the theory involved in defects caused by non-ionization, known as NIEL, with a focus on silicon materials. When energy is transferred directly to the atoms in the crystalline lattice, it can either be dissipated in the form of vibrations or be large enough to pull atoms out of that lattice. This weakens the lattice, causing measurement errors that can lead to permanent damage. This study is extremely important because silicon materials are used in radiation detectors. These detectors cannot return false measurements, especially in dangerous situations, such as in nuclear reactor monitoring. After presenting the theory involved, examples are shown. Failures of up to 30% were found by the researchers. 2021 artículo científico 2319-0612 https://www.redalyc.org/articulo.oa?id=722280970013 en http://www.redalyc.org/revista.oa?id=7222 Brazilian Journal of Radiation Sciences application/pdf Sociedade Brasileira de Proteção Radiológica - SBPR Brazilian Journal of Radiation Sciences (Brasil) Num.3 Vol.9 |
| format | Artículo científico |
| id | redalyc_722280970013 |
| language | en |
| publishDate | 2021 |
| publisher | Sociedade Brasileira de Proteção Radiológica - SBPR |
| spellingShingle | The basics of radiation damage in crystalline silicon networks by NIEL C. Daruich de Souza Biología Non NIEL diodes silicon radiation damage The basics of radiation damage in crystalline silicon networks by NIEL C. Daruich de Souza J. B Kim J. J Kim J. Kim W. Ji K. J. Son S. M Choi G. J Kang J. T Hong Biología Non NIEL diodes silicon radiation damage Basically, radiation can cause two effects on materials: ionization and non-ionization. This work presented the theory involved in defects caused by non-ionization, known as NIEL, with a focus on silicon materials. When energy is transferred directly to the atoms in the crystalline lattice, it can either be dissipated in the form of vibrations or be large enough to pull atoms out of that lattice. This weakens the lattice, causing measurement errors that can lead to permanent damage. This study is extremely important because silicon materials are used in radiation detectors. These detectors cannot return false measurements, especially in dangerous situations, such as in nuclear reactor monitoring. After presenting the theory involved, examples are shown. Failures of up to 30% were found by the researchers. 2021 artículo científico 2319-0612 https://www.redalyc.org/articulo.oa?id=722280970013 en http://www.redalyc.org/revista.oa?id=7222 Brazilian Journal of Radiation Sciences application/pdf Sociedade Brasileira de Proteção Radiológica - SBPR Brazilian Journal of Radiation Sciences (Brasil) Num.3 Vol.9 |
| title | The basics of radiation damage in crystalline silicon networks by NIEL |
| topic | Biología Non NIEL diodes silicon radiation damage |
| url | https://www.redalyc.org/articulo.oa?id=722280970013 |