Thermal-Electrical finite element analysis of nanometric copper vias under high fluence stress
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| Format: | Artículo científico |
| Sprache: | en |
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Universidad San Francisco de Quito
2013
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| _version_ | 1876468352173473792 |
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| author | F. Oviedo |
| author_facet | F. Oviedo |
| contents | Thermal-Electrical finite element analysis of nanometric copper vias under high fluence stress F. Oviedo L. Trojman T. Kauerauf E. A. Bonifaz Multidisciplinaria (Ciencias Naturales y Exactas) Joule heating copper nano vias sensitivity analysis finite element analysis interface electric conductivity This paper presents the development of a thermal-electrical finite element (FE) model with the objective to analyze failure mechanisms responsible of physical degradation (void, copper silicate formation, etc.) caused by high fluence stress of 90nm copper vias for FinfET devices. Indeed in [1], this physical degradation was interpreted as a main consequence of Joule effect, however their employed model reached too low temperatures to explain the observed physical degradation. In order to confirm this, the steady-state FE model developed in this work computes the temperature increase and distribution caused by high electrical current density flowing through a copper contact, considering non-ideal thermal and electrical interfaces. In addition, a sensitivity analysis is performed as a way to identify critical failure parameters. The temperature response of the model to independent variation of electrical resistivity of studied materials, and interfacial electrical and thermal conductance between the copper contact and its diffusion barrier were obtained. The decrease of interfacial electrical conductance triggers steady-state temperatures over copper and silicate melting points and, in consequence leads to temperature high enough to explain the physical degradation. 2013 artículo científico 1390-5384 https://www.redalyc.org/articulo.oa?id=726180836010 en http://www.redalyc.org/revista.oa?id=7261 Avances en Ciencias e Ingenierías application/pdf Universidad San Francisco de Quito Avances en Ciencias e Ingenierías (Ecuador) Num.2 Vol.5 |
| format | Artículo científico |
| id | redalyc_726180836010 |
| institution | Redalyc |
| language | en |
| publishDate | 2013 |
| publisher | Universidad San Francisco de Quito |
| spellingShingle | Thermal-Electrical finite element analysis of nanometric copper vias under high fluence stress F. Oviedo Multidisciplinaria (Ciencias Naturales y Exactas) Joule heating copper nano vias sensitivity analysis finite element analysis interface electric conductivity Thermal-Electrical finite element analysis of nanometric copper vias under high fluence stress F. Oviedo L. Trojman T. Kauerauf E. A. Bonifaz Multidisciplinaria (Ciencias Naturales y Exactas) Joule heating copper nano vias sensitivity analysis finite element analysis interface electric conductivity This paper presents the development of a thermal-electrical finite element (FE) model with the objective to analyze failure mechanisms responsible of physical degradation (void, copper silicate formation, etc.) caused by high fluence stress of 90nm copper vias for FinfET devices. Indeed in [1], this physical degradation was interpreted as a main consequence of Joule effect, however their employed model reached too low temperatures to explain the observed physical degradation. In order to confirm this, the steady-state FE model developed in this work computes the temperature increase and distribution caused by high electrical current density flowing through a copper contact, considering non-ideal thermal and electrical interfaces. In addition, a sensitivity analysis is performed as a way to identify critical failure parameters. The temperature response of the model to independent variation of electrical resistivity of studied materials, and interfacial electrical and thermal conductance between the copper contact and its diffusion barrier were obtained. The decrease of interfacial electrical conductance triggers steady-state temperatures over copper and silicate melting points and, in consequence leads to temperature high enough to explain the physical degradation. 2013 artículo científico 1390-5384 https://www.redalyc.org/articulo.oa?id=726180836010 en http://www.redalyc.org/revista.oa?id=7261 Avances en Ciencias e Ingenierías application/pdf Universidad San Francisco de Quito Avances en Ciencias e Ingenierías (Ecuador) Num.2 Vol.5 |
| title | Thermal-Electrical finite element analysis of nanometric copper vias under high fluence stress |
| topic | Multidisciplinaria (Ciencias Naturales y Exactas) Joule heating copper nano vias sensitivity analysis finite element analysis interface electric conductivity |
| url | https://www.redalyc.org/articulo.oa?id=726180836010 |