Prócel, L. M. (2014). TCAD Simulation for ultrathin body and buried oxide fully depleted silicon-on-insulator MOSFET: A comparison between COMSOL and Sentaurus. Universidad San Francisco de Quito.
Cita Chicago Style (17a ed.)Prócel, Luis Miguel. TCAD Simulation for Ultrathin Body and Buried Oxide Fully Depleted Silicon-on-insulator MOSFET: A Comparison Between COMSOL and Sentaurus. Universidad San Francisco de Quito, 2014.
Cita MLA (9a ed.)Prócel, Luis Miguel. TCAD Simulation for Ultrathin Body and Buried Oxide Fully Depleted Silicon-on-insulator MOSFET: A Comparison Between COMSOL and Sentaurus. Universidad San Francisco de Quito, 2014.
Precaución: Estas citas no son 100% exactas.