Prócel, L. M. (2014). TCAD Simulation for ultrathin body and buried oxide fully depleted silicon-on-insulator MOSFET: A comparison between COMSOL and Sentaurus. Universidad San Francisco de Quito.
Chicago Style (17th ed.) CitationPrócel, Luis Miguel. TCAD Simulation for Ultrathin Body and Buried Oxide Fully Depleted Silicon-on-insulator MOSFET: A Comparison Between COMSOL and Sentaurus. Universidad San Francisco de Quito, 2014.
MLA (9th ed.) CitationPrócel, Luis Miguel. TCAD Simulation for Ultrathin Body and Buried Oxide Fully Depleted Silicon-on-insulator MOSFET: A Comparison Between COMSOL and Sentaurus. Universidad San Francisco de Quito, 2014.
Warning: These citations may not always be 100% accurate.