TCAD Simulation for ultrathin body and buried oxide fully depleted silicon-on-insulator MOSFET: a comparison between COMSOL and Sentaurus
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| Format: | Artículo científico |
| Sprache: | en |
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Universidad San Francisco de Quito
2014
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| author | Luis Miguel Prócel |
| author_facet | Luis Miguel Prócel |
| contents | TCAD Simulation for ultrathin body and buried oxide fully depleted silicon-on-insulator MOSFET: a comparison between COMSOL and Sentaurus Luis Miguel Prócel Lionel Trojman Multidisciplinaria (Ciencias Naturales y Exactas) SOI TCAD MOSFET Sentaurus simulation In the present work, we develop a model for simulating an ultrathin body (10nm) and buried oxide (20nm) fully-depleted silicon-on-insulator MOSFET with SiO2 gate oxide (5nm) by using TCAD-Sentaurus software. We performed DC-simulations for studying the behavior of the threshold voltage and the transconductance. Furthermore, AC-simulations were performed for studying the inversion capacitance and the inversion charge. We compare our results with similar simulations carried out in a previous work in which COMSOL-Multiphysics software was used. We have obtained similar results in both works. However, Sentaurus features more interesting details like introducing a more realistic picture of the physical mechanisms of such complex devices. 2014 artículo científico 1390-5384 https://www.redalyc.org/articulo.oa?id=726180839016 en http://www.redalyc.org/revista.oa?id=7261 Avances en Ciencias e Ingenierías application/pdf Universidad San Francisco de Quito Avances en Ciencias e Ingenierías (Ecuador) Num.1 Vol.6 |
| format | Artículo científico |
| id | redalyc_726180839016 |
| institution | Redalyc |
| language | en |
| publishDate | 2014 |
| publisher | Universidad San Francisco de Quito |
| spellingShingle | TCAD Simulation for ultrathin body and buried oxide fully depleted silicon-on-insulator MOSFET: a comparison between COMSOL and Sentaurus Luis Miguel Prócel Multidisciplinaria (Ciencias Naturales y Exactas) SOI TCAD MOSFET Sentaurus simulation TCAD Simulation for ultrathin body and buried oxide fully depleted silicon-on-insulator MOSFET: a comparison between COMSOL and Sentaurus Luis Miguel Prócel Lionel Trojman Multidisciplinaria (Ciencias Naturales y Exactas) SOI TCAD MOSFET Sentaurus simulation In the present work, we develop a model for simulating an ultrathin body (10nm) and buried oxide (20nm) fully-depleted silicon-on-insulator MOSFET with SiO2 gate oxide (5nm) by using TCAD-Sentaurus software. We performed DC-simulations for studying the behavior of the threshold voltage and the transconductance. Furthermore, AC-simulations were performed for studying the inversion capacitance and the inversion charge. We compare our results with similar simulations carried out in a previous work in which COMSOL-Multiphysics software was used. We have obtained similar results in both works. However, Sentaurus features more interesting details like introducing a more realistic picture of the physical mechanisms of such complex devices. 2014 artículo científico 1390-5384 https://www.redalyc.org/articulo.oa?id=726180839016 en http://www.redalyc.org/revista.oa?id=7261 Avances en Ciencias e Ingenierías application/pdf Universidad San Francisco de Quito Avances en Ciencias e Ingenierías (Ecuador) Num.1 Vol.6 |
| title | TCAD Simulation for ultrathin body and buried oxide fully depleted silicon-on-insulator MOSFET: a comparison between COMSOL and Sentaurus |
| topic | Multidisciplinaria (Ciencias Naturales y Exactas) SOI TCAD MOSFET Sentaurus simulation |
| url | https://www.redalyc.org/articulo.oa?id=726180839016 |