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TCAD Simulation for ultrathin body and buried oxide fully depleted silicon-on-insulator MOSFET: a comparison between COMSOL and Sentaurus

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Dettagli Bibliografici
Autore principale:	Luis Miguel Prócel
Natura:	Artículo científico
Lingua:	en
Pubblicazione:	Universidad San Francisco de Quito 2014
Soggetti:	Multidisciplinaria (Ciencias Naturales y Exactas) SOI TCAD MOSFET Sentaurus simulation
Accesso online:	Acceder al recurso
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