Interfacial reactions of Ti/ and Zr/Si1-xGex/Si contacts with rapid thermal annealing
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| Format: | Artículo científico |
| Language: | en |
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| _version_ | 1876454861952778240 |
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| author | Yukio Yasuda |
| author_facet | Yukio Yasuda |
| contents | Interfacial reactions of Ti/ and Zr/Si1-xGex/Si contacts with rapid thermal annealing Yukio Yasuda Osamu Nakatsuka Shigeaki Zaima Física, Astronomía y Matemáticas Ti Zr SiGe system Electrical property Interfacial reaction The interfacial reactions of Ti/ and Zr/Si0.5Ge0.5/Si systems by rapid thermal annealing (RTA) have been investigated at temperatures from 580 to 900°C. In Ti/Si0.5Ge0.5 systems, C49-TiSi2 is transformed to C54-Ti(Si1-y Gey)2 by RTA for 30 sec at about 750°C, whose transformation temperature is lower than that of TiSi2 in Ti/Si systems. The C54- Ti(Si1-y Gey)2 has Si-rich chemical compositions and, on the other hand, the formation of Ge piling up is observed. In the case of Zr/Si0.5Ge0.5 systems, Zr5Ge4 and C49-Zr(Si1-yGey)2 is produced at 580°C and 700°C, respectively. The reaction between Zr and Si1-xGex occurs uniformly and the Ge fraction of C49-Zr(Si1-yGey)2 is close to y=0.5. It is considered that Ge atoms have an influence on the reduction of formation temperature of C54 and C49 phases in Ti/ and Zr/Si1-xGex systems, respectively. The electrical properties such as Schottky barrier heights in Ti/ and Zr/Si0.5Ge0.5 systems can be explained on the basis of interfacial reactions 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200901 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| format | Artículo científico |
| id | redalyc_94200901 |
| institution | Redalyc |
| language | en |
| publishDate | 1999 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | Interfacial reactions of Ti/ and Zr/Si1-xGex/Si contacts with rapid thermal annealing Yukio Yasuda Física, Astronomía y Matemáticas Ti Zr SiGe system Electrical property Interfacial reaction Interfacial reactions of Ti/ and Zr/Si1-xGex/Si contacts with rapid thermal annealing Yukio Yasuda Osamu Nakatsuka Shigeaki Zaima Física, Astronomía y Matemáticas Ti Zr SiGe system Electrical property Interfacial reaction The interfacial reactions of Ti/ and Zr/Si0.5Ge0.5/Si systems by rapid thermal annealing (RTA) have been investigated at temperatures from 580 to 900°C. In Ti/Si0.5Ge0.5 systems, C49-TiSi2 is transformed to C54-Ti(Si1-y Gey)2 by RTA for 30 sec at about 750°C, whose transformation temperature is lower than that of TiSi2 in Ti/Si systems. The C54- Ti(Si1-y Gey)2 has Si-rich chemical compositions and, on the other hand, the formation of Ge piling up is observed. In the case of Zr/Si0.5Ge0.5 systems, Zr5Ge4 and C49-Zr(Si1-yGey)2 is produced at 580°C and 700°C, respectively. The reaction between Zr and Si1-xGex occurs uniformly and the Ge fraction of C49-Zr(Si1-yGey)2 is close to y=0.5. It is considered that Ge atoms have an influence on the reduction of formation temperature of C54 and C49 phases in Ti/ and Zr/Si1-xGex systems, respectively. The electrical properties such as Schottky barrier heights in Ti/ and Zr/Si0.5Ge0.5 systems can be explained on the basis of interfacial reactions 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200901 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| title | Interfacial reactions of Ti/ and Zr/Si1-xGex/Si contacts with rapid thermal annealing |
| topic | Física, Astronomía y Matemáticas Ti Zr SiGe system Electrical property Interfacial reaction |
| url | https://www.redalyc.org/articulo.oa?id=94200901 |