Guardado en:
| Autor principal: | |
|---|---|
| Formato: | Artículo científico |
| Lenguaje: | en |
| Publicado: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
|
| Materias: | |
| Acceso en línea: | https://www.redalyc.org/articulo.oa?id=94200902 |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Tabla de Contenidos:
- Preparation and optical properties of Ge and C-induced Ge quantum dots on Si K. Eberl O. G. Schmidt O. Kienzle F. Ernst Física, Astronomía y Matemáticas Pure Ge epitaxially grown on Si (100) at high temperatures forms typically 100 nm lateral size islands on top of a 3-4 monolayer thick wetting layer. In stacked layers of Ge dots pronounced vertical alignment is observed if the thickness of the Si spacer layers is smaller than about 50 nm. Pregrowth of a small amount of C on Si substrate induces very small 10 nm size Ge quantum dots after deposition of about 2 to 3 monolayers of Ge. Photoluminescence (PL) studies indicate a spatially indirect radiative recombination mechanism with the no phonon line strongly dominating. Strong confinement shift in the 1-2 nm high and 10 nm lateral size dots results in low activation energies of 30 meV , which causes luminescence quenching above 50 K. For large stacked Ge islands with 13 nm thin Si spacer layers we observe a significantly enhanced Ge dot-related PL signal up to room temperature at 1.55 µm wavelength. This is attributed to a spatially indirect transition between heavy holes confined within the compressively strained Ge dots and two fold degenerated D state electrons in the tensile strained Si between the Ge stacked dots 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200902 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9