Influences of nitridation and thermal annealing on GaN buffer layers and the property of subsequent GaN epilayers grown by MOCVD
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| Format: | Artículo científico |
| Language: | en |
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| _version_ | 1876452502021341184 |
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| author | Dong Sing Wuu |
| author_facet | Dong Sing Wuu |
| contents | Influences of nitridation and thermal annealing on GaN buffer layers and the property of subsequent GaN epilayers grown by MOCVD Dong Sing Wuu Wei Hao Tseng Wei Tsung Lin Ray Hua Horng Física, Astronomía y Matemáticas GaN epilayers were grown on sapphire substrates by metalorganic chemical vapor deposition using the twostep method. The surface morphology of the GaN buffer layer grown under various pregrowth and postgrowthtreatments, such as nitridation duration, temperature-ramping rate and ambient during annealing, was analyzedby atomic force microscopy (AFM). It was found that the nitridation time and post-annealing parameters shouldbe optimized in order to maintain the buffer layer with smooth surface for the GaN epitaxial growth. Lowerramping rate (<40oC/min) and insufficient NH3 flow will deteriorate the buffer-layer surface and yields large hexagonal three-dimensional islands. Under the optimum conditions developed by the AFM examinations, specular GaN epilayer with 25-nm-thick buffer layer can be obtained. The 25-K photoluminescence spectrum reveals a strong near-band-edge emission at 356.65 nm with a full width at half maximum of 13.1 meV 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200906 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| format | Artículo científico |
| id | redalyc_94200906 |
| institution | Redalyc |
| language | en |
| publishDate | 1999 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | Influences of nitridation and thermal annealing on GaN buffer layers and the property of subsequent GaN epilayers grown by MOCVD Dong Sing Wuu Física, Astronomía y Matemáticas Influences of nitridation and thermal annealing on GaN buffer layers and the property of subsequent GaN epilayers grown by MOCVD Dong Sing Wuu Wei Hao Tseng Wei Tsung Lin Ray Hua Horng Física, Astronomía y Matemáticas GaN epilayers were grown on sapphire substrates by metalorganic chemical vapor deposition using the twostep method. The surface morphology of the GaN buffer layer grown under various pregrowth and postgrowthtreatments, such as nitridation duration, temperature-ramping rate and ambient during annealing, was analyzedby atomic force microscopy (AFM). It was found that the nitridation time and post-annealing parameters shouldbe optimized in order to maintain the buffer layer with smooth surface for the GaN epitaxial growth. Lowerramping rate (<40oC/min) and insufficient NH3 flow will deteriorate the buffer-layer surface and yields large hexagonal three-dimensional islands. Under the optimum conditions developed by the AFM examinations, specular GaN epilayer with 25-nm-thick buffer layer can be obtained. The 25-K photoluminescence spectrum reveals a strong near-band-edge emission at 356.65 nm with a full width at half maximum of 13.1 meV 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200906 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| title | Influences of nitridation and thermal annealing on GaN buffer layers and the property of subsequent GaN epilayers grown by MOCVD |
| topic | Física, Astronomía y Matemáticas |
| url | https://www.redalyc.org/articulo.oa?id=94200906 |