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| Format: | Artículo científico |
| Language: | en |
| Published: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| Online Access: | https://www.redalyc.org/articulo.oa?id=94200907 |
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Table of Contents:
- Ion beam irradiation of thin CaF2 films: A study of lithographic properties A. Thomas A. Zehe A. Ramírez Física, Astronomía y Matemáticas The technological track to ever smaller devices in very and ultra high scale integration schemes with feature sizes lowerthan 1 m, carries classical photolithographic methods to physical limits, and is claiming a transition to lowerwavelength or particle irradiation. New resist materials and exposure techniques are under study. Earth AlkalineFluorides, such as CaF2, BaF2 and SrF3, decompose under electron and ion irradiation by desorbing Fluor, and oxidizingthe remaining earth alkaline metal under the presence of Oxygen. The solubility of the oxidized areas is then modified.The present paper deals with resist properties of CaF2 under ion beam exposition with Ar+-, He+-, Si+-, and O+-ions.RBS measurements are applied in order to determine modifications in the film composition. Positive and negative resistbehavior is found in water and dilute HCl, respectively. Both, the change of chemical composition and the patterncharacteristics correlate with the energy deposition of implanted ions. Characteristic lithographic curves are shown 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200907 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9