Intergranular coulomb blockade in thin films of magnetoresistive manganites
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| Format: | Artículo científico |
| Language: | en |
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| _version_ | 1876482204854386688 |
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| author | J. L. Martínez |
| author_facet | J. L. Martínez |
| contents | Intergranular coulomb blockade in thin films of magnetoresistive manganites J. L. Martínez M. García Hernández A. de Andrés L. Vazquez A. Muñoz C. Prieto Física, Astronomía y Matemáticas The low temperature behavior of the resistance of polycrystalline thin films of magnetoresistive manganites has beeninvestigated for grain sizes in the nanometric scale. We have optimized the dc-sputtering deposition and annealingprocedures so as to meet the grain size requirements while keeping the basic features of the magnetic and electronictransport of the bulk material. A systematic upturn of the resistance at around 50 K is observed in all films (12nm-80nmgrain diameter).These results point out the existence of a Coulomb blockade mechanism affecting the conduction ofelectrons at least in the smallest grain sizes explored . The evolution of this effect with the magnetic field is alsoinvestigated 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200911 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| format | Artículo científico |
| id | redalyc_94200911 |
| institution | Redalyc |
| language | en |
| publishDate | 1999 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | Intergranular coulomb blockade in thin films of magnetoresistive manganites J. L. Martínez Física, Astronomía y Matemáticas Intergranular coulomb blockade in thin films of magnetoresistive manganites J. L. Martínez M. García Hernández A. de Andrés L. Vazquez A. Muñoz C. Prieto Física, Astronomía y Matemáticas The low temperature behavior of the resistance of polycrystalline thin films of magnetoresistive manganites has beeninvestigated for grain sizes in the nanometric scale. We have optimized the dc-sputtering deposition and annealingprocedures so as to meet the grain size requirements while keeping the basic features of the magnetic and electronictransport of the bulk material. A systematic upturn of the resistance at around 50 K is observed in all films (12nm-80nmgrain diameter).These results point out the existence of a Coulomb blockade mechanism affecting the conduction ofelectrons at least in the smallest grain sizes explored . The evolution of this effect with the magnetic field is alsoinvestigated 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200911 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| title | Intergranular coulomb blockade in thin films of magnetoresistive manganites |
| topic | Física, Astronomía y Matemáticas |
| url | https://www.redalyc.org/articulo.oa?id=94200911 |