Preparation of reactive magnetron sputtered SiC films by RF-RMS technique
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| Format: | Artículo científico |
| Language: | en |
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| _version_ | 1876449684466171904 |
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| author | E. Andrade |
| author_facet | E. Andrade |
| contents | Preparation of reactive magnetron sputtered SiC films by RF-RMS technique E. Andrade S. Muhl A. Mahmood L. Enrique Sansores Física, Astronomía y Matemáticas SiC thin films have been prepared by using the RF reactive magnetron sputtering. The deposition parameters have beenvaried over a wide range to optimize the quality of the films; substrate temperature from 700-1000°C, Ar/CH4composition from 80/20-50/50 and RF-Power 100-200 Watt. The samples have been characterized by X-Ray diffraction,Rutherford backscattering, Perfilometry, FTIR spectroscopy and elipsometry. The results show that good quality siliconcarbide films can be prepared by using RF-RMS technique 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200913 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| format | Artículo científico |
| id | redalyc_94200913 |
| institution | Redalyc |
| language | en |
| publishDate | 1999 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | Preparation of reactive magnetron sputtered SiC films by RF-RMS technique E. Andrade Física, Astronomía y Matemáticas Preparation of reactive magnetron sputtered SiC films by RF-RMS technique E. Andrade S. Muhl A. Mahmood L. Enrique Sansores Física, Astronomía y Matemáticas SiC thin films have been prepared by using the RF reactive magnetron sputtering. The deposition parameters have beenvaried over a wide range to optimize the quality of the films; substrate temperature from 700-1000°C, Ar/CH4composition from 80/20-50/50 and RF-Power 100-200 Watt. The samples have been characterized by X-Ray diffraction,Rutherford backscattering, Perfilometry, FTIR spectroscopy and elipsometry. The results show that good quality siliconcarbide films can be prepared by using RF-RMS technique 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200913 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| title | Preparation of reactive magnetron sputtered SiC films by RF-RMS technique |
| topic | Física, Astronomía y Matemáticas |
| url | https://www.redalyc.org/articulo.oa?id=94200913 |