Optical properties, infrared spectroscopy and photoluminescence at low temperature of LPCVD silicon oxynitride thin films
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| Formato: | Artículo científico |
| Lenguaje: | en |
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| _version_ | 1876438601496002560 |
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| author | Wilfrido Calleja |
| author_facet | Wilfrido Calleja |
| contents | Optical properties, infrared spectroscopy and photoluminescence at low temperature of LPCVD silicon oxynitride thin films Wilfrido Calleja Elvia Díaz Concepción Mejía Arturo Morales Jesús Carrillo Mariano Aceves Gerardo Contreras Física, Astronomía y Matemáticas Low pressure chemical vapor deposition (LPCVD) silicon oxynitride (SiON) films of various compositions between SiO2 and Si3N4 were grown by changing the relative ratio (Ro) of nitrous oxide (N2O) to silane (SiH4) pressures while keeping constant the ammonia (NH4) pressure. The SiON films were deposited at 700º C on p-type silicon substrates (with a carrier concentration of 1015 cm-3), varying Ro from 0.32 to 1.38. Some samples were subsequently annealed at 700º C for times up to 150 min, whereas other samples were annealed at 1000º C for times up to 60 min in nitrogen. In this work, we present results of the effect of Ro upon the refractive index, the infrared spectrum, and the growth rate of the LPCVD SiON layers. In particular, we show that as Ro increases, the refractiveindex decreases from values very close to those of SiN to values very close to those of SiO2. In addition, the infrared spectrum shows that the peak associated to the Si-O stretching vibration mode decreases as compared to the Si-N stretching local mode when Ro increases. The annealing processes seem not to modify the films as thickness and refractive index remain constant as a function of the annealing time. In addition, we made photoluminescence spectroscopy measurements at low temperature (9-10º K) and found luminescence in the range between 1.4 eV and 2.4 eV with a peak around 2 eV. Finally, we also discuss the effect that a thermal annealing at 700º C for 90 minutes has upon the photoluminescence spectra 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200914 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| format | Artículo científico |
| id | redalyc_94200914 |
| institution | Redalyc |
| language | en |
| publishDate | 1999 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | Optical properties, infrared spectroscopy and photoluminescence at low temperature of LPCVD silicon oxynitride thin films Wilfrido Calleja Física, Astronomía y Matemáticas Optical properties, infrared spectroscopy and photoluminescence at low temperature of LPCVD silicon oxynitride thin films Wilfrido Calleja Elvia Díaz Concepción Mejía Arturo Morales Jesús Carrillo Mariano Aceves Gerardo Contreras Física, Astronomía y Matemáticas Low pressure chemical vapor deposition (LPCVD) silicon oxynitride (SiON) films of various compositions between SiO2 and Si3N4 were grown by changing the relative ratio (Ro) of nitrous oxide (N2O) to silane (SiH4) pressures while keeping constant the ammonia (NH4) pressure. The SiON films were deposited at 700º C on p-type silicon substrates (with a carrier concentration of 1015 cm-3), varying Ro from 0.32 to 1.38. Some samples were subsequently annealed at 700º C for times up to 150 min, whereas other samples were annealed at 1000º C for times up to 60 min in nitrogen. In this work, we present results of the effect of Ro upon the refractive index, the infrared spectrum, and the growth rate of the LPCVD SiON layers. In particular, we show that as Ro increases, the refractiveindex decreases from values very close to those of SiN to values very close to those of SiO2. In addition, the infrared spectrum shows that the peak associated to the Si-O stretching vibration mode decreases as compared to the Si-N stretching local mode when Ro increases. The annealing processes seem not to modify the films as thickness and refractive index remain constant as a function of the annealing time. In addition, we made photoluminescence spectroscopy measurements at low temperature (9-10º K) and found luminescence in the range between 1.4 eV and 2.4 eV with a peak around 2 eV. Finally, we also discuss the effect that a thermal annealing at 700º C for 90 minutes has upon the photoluminescence spectra 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200914 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| title | Optical properties, infrared spectroscopy and photoluminescence at low temperature of LPCVD silicon oxynitride thin films |
| topic | Física, Astronomía y Matemáticas |
| url | https://www.redalyc.org/articulo.oa?id=94200914 |