Transparent conducting zinc-co-doped ITO films prepared by magnetron sputtering
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| Formato: | Artículo científico |
| Lenguaje: | en |
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| _version_ | 1876480383961268224 |
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| author | Tadatsugu Minami |
| author_facet | Tadatsugu Minami |
| contents | Transparent conducting zinc-co-doped ITO films prepared by magnetron sputtering Tadatsugu Minami Takashi Yamamoto Hidenobu Toda Toshihiro Miyata Física, Astronomía y Matemáticas ITO Zn co doped ITO thin films etching rate Zn-co-doped ITO films have been prepared by dc magnetron sputtering using powder targets. Zn-co-doped ITO films with a practical etching rate as well as a low resistivity were obtained; in particular, etching rate could be controlled by varying the Zn content doped into ITO. In addition, a resistivity of 2 3×10-4 W cm was obtained in Zn-co-dped ITO films prepared with a Sn content of 9.3 at.% and a Zn content of 0-34.1 at.% under optimized target preparation and sputter deposition conditions. The spatial distribution of electrical properties on the substrate surface in Zn-co-doped ITO films was considerably affected by the Zn content. A relatively uniform distribution of electrical properties was obtained in films prepared with a Zn content in the range of 15-34.1 at.% 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200917 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| format | Artículo científico |
| id | redalyc_94200917 |
| institution | Redalyc |
| language | en |
| publishDate | 1999 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | Transparent conducting zinc-co-doped ITO films prepared by magnetron sputtering Tadatsugu Minami Física, Astronomía y Matemáticas ITO Zn co doped ITO thin films etching rate Transparent conducting zinc-co-doped ITO films prepared by magnetron sputtering Tadatsugu Minami Takashi Yamamoto Hidenobu Toda Toshihiro Miyata Física, Astronomía y Matemáticas ITO Zn co doped ITO thin films etching rate Zn-co-doped ITO films have been prepared by dc magnetron sputtering using powder targets. Zn-co-doped ITO films with a practical etching rate as well as a low resistivity were obtained; in particular, etching rate could be controlled by varying the Zn content doped into ITO. In addition, a resistivity of 2 3×10-4 W cm was obtained in Zn-co-dped ITO films prepared with a Sn content of 9.3 at.% and a Zn content of 0-34.1 at.% under optimized target preparation and sputter deposition conditions. The spatial distribution of electrical properties on the substrate surface in Zn-co-doped ITO films was considerably affected by the Zn content. A relatively uniform distribution of electrical properties was obtained in films prepared with a Zn content in the range of 15-34.1 at.% 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200917 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| title | Transparent conducting zinc-co-doped ITO films prepared by magnetron sputtering |
| topic | Física, Astronomía y Matemáticas ITO Zn co doped ITO thin films etching rate |
| url | https://www.redalyc.org/articulo.oa?id=94200917 |