Manganese-activated gallium oxide EL phosphor thin films prepared using various deposition methods
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| Format: | Artículo científico |
| Language: | en |
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| _version_ | 1876432324248207360 |
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| author | Toshikuni Nakatani |
| author_facet | Toshikuni Nakatani |
| contents | Manganese-activated gallium oxide EL phosphor thin films prepared using various deposition methods Toshikuni Nakatani Tadatsugu Minami Toshihiro Miyata Física, Astronomía y Matemáticas Ga2O3:Mn Thin film Oxide phosphor Electroluminescent device The luminescent properties of Ga2O3:Mn thin films prepared by magnetron sputtering or chemical methods such as solution coating and sol-gel techniques have been described. The electroluminescent characteristics were evaluated by thin-film electroluminescent (TFEL) devices using the Ga2O3:Mn thin films as the emitting layer. The photoluminescent and electroluminescent characteristics were mainly correlated to the crystallographical properties of the thin-film emitting layer. A luminance of 13.5 cd/m2 was obtained in a TFEL device using an as deposited Ga2O3:Mn thin film prepared by magnetron sputtering when driven at 1kHz. Luminances above 500 and 100m cd/m2 were obtained in TFEL devices using annealed Ga2O3:Mn thin films regardless of the thin-film deposition techniques, when driven at 1 kHz and 60 Hz, respectively 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200918 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| format | Artículo científico |
| id | redalyc_94200918 |
| institution | Redalyc |
| language | en |
| publishDate | 1999 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | Manganese-activated gallium oxide EL phosphor thin films prepared using various deposition methods Toshikuni Nakatani Física, Astronomía y Matemáticas Ga2O3:Mn Thin film Oxide phosphor Electroluminescent device Manganese-activated gallium oxide EL phosphor thin films prepared using various deposition methods Toshikuni Nakatani Tadatsugu Minami Toshihiro Miyata Física, Astronomía y Matemáticas Ga2O3:Mn Thin film Oxide phosphor Electroluminescent device The luminescent properties of Ga2O3:Mn thin films prepared by magnetron sputtering or chemical methods such as solution coating and sol-gel techniques have been described. The electroluminescent characteristics were evaluated by thin-film electroluminescent (TFEL) devices using the Ga2O3:Mn thin films as the emitting layer. The photoluminescent and electroluminescent characteristics were mainly correlated to the crystallographical properties of the thin-film emitting layer. A luminance of 13.5 cd/m2 was obtained in a TFEL device using an as deposited Ga2O3:Mn thin film prepared by magnetron sputtering when driven at 1kHz. Luminances above 500 and 100m cd/m2 were obtained in TFEL devices using annealed Ga2O3:Mn thin films regardless of the thin-film deposition techniques, when driven at 1 kHz and 60 Hz, respectively 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200918 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| title | Manganese-activated gallium oxide EL phosphor thin films prepared using various deposition methods |
| topic | Física, Astronomía y Matemáticas Ga2O3:Mn Thin film Oxide phosphor Electroluminescent device |
| url | https://www.redalyc.org/articulo.oa?id=94200918 |