The C-V investigation of light-related properties of porous silicon/crystalline silicon structure
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| Format: | Artículo científico |
| Sprache: | en |
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| _version_ | 1876470356066172928 |
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| author | E. Pinèík |
| author_facet | E. Pinèík |
| contents | The C-V investigation of light-related properties of porous silicon/crystalline silicon structure E. Pinèík J. Barto M. Kuèera M. Jergel C. Falcony Física, Astronomía y Matemáticas This paper presents a study of porous silicon layer of » 1 mm thickness, formed electrolytically in crystalline p-Si, by Xray diffraction at grazing incidence, photoluminescence (PL) at 6 K and room temperature, C-V measurements, and charge version of deep level transient spectroscopy (DLTS). The C-V measurements performed at LN2 and room temperatures showed that the electrical properties of the structure are extraordinary sensitive to light illumination and air humidity. Namely, a large hysteresis of the C-V curves is completely lost on the light illumination. The sensitivity of the DLTS signal to light illumination and the temporal stability of the PL spectra at room temperature are illustrated, too. Common features with the optical properties of the amorphous Si:H/crystalline Si structure (Staebler-Wronski effect) are discussed 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200920 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| format | Artículo científico |
| id | redalyc_94200920 |
| institution | Redalyc |
| language | en |
| publishDate | 1999 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | The C-V investigation of light-related properties of porous silicon/crystalline silicon structure E. Pinèík Física, Astronomía y Matemáticas The C-V investigation of light-related properties of porous silicon/crystalline silicon structure E. Pinèík J. Barto M. Kuèera M. Jergel C. Falcony Física, Astronomía y Matemáticas This paper presents a study of porous silicon layer of » 1 mm thickness, formed electrolytically in crystalline p-Si, by Xray diffraction at grazing incidence, photoluminescence (PL) at 6 K and room temperature, C-V measurements, and charge version of deep level transient spectroscopy (DLTS). The C-V measurements performed at LN2 and room temperatures showed that the electrical properties of the structure are extraordinary sensitive to light illumination and air humidity. Namely, a large hysteresis of the C-V curves is completely lost on the light illumination. The sensitivity of the DLTS signal to light illumination and the temporal stability of the PL spectra at room temperature are illustrated, too. Common features with the optical properties of the amorphous Si:H/crystalline Si structure (Staebler-Wronski effect) are discussed 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200920 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| title | The C-V investigation of light-related properties of porous silicon/crystalline silicon structure |
| topic | Física, Astronomía y Matemáticas |
| url | https://www.redalyc.org/articulo.oa?id=94200920 |