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| Format: | Artículo científico |
| Language: | en |
| Published: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| Subjects: | |
| Online Access: | https://www.redalyc.org/articulo.oa?id=94200921 |
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Table of Contents:
- Growth of AlN Films by Chemical Vapor Deposition Reynaldo Martínez Guerrero Roberto Vargas García Física, Astronomía y Matemáticas AlN films were prepared by CVD using aluminum alkyl ((CH3)3Al) precursor in an horizontal hot-wall type reactor. AlN films of different crystalline quality were obtained at Tdep=973-1023 K and Ptot=1.99 kPa. 2 mm thick AlN films can be grown highly oriented on amorphous quartz substrates. Thicker AlN films exhibit a polycrystalline nature. The 0.1-0.2 mm thick AlN films were transparent and their refractive indexes were about 1.5-1.9 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200921 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9