Spectroscopic ellipsometry of SixGe1 x / Si : a tool for composition and profile analysis in strained heterostructure used in the microelectronics industry
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| Natura: | Artículo científico |
| Lingua: | en |
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| _version_ | 1876447176022818816 |
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| author | F. Ferrieu |
| author_facet | F. Ferrieu |
| contents | Spectroscopic ellipsometry of SixGe1 x / Si : a tool for composition and profile analysis in strained heterostructure used in the microelectronics industry F. Ferrieu J. L. Regolini Física, Astronomía y Matemáticas SixGe1 alloys optical properties strained SiGe alloys spectroscopic ellipsometry SixGe1-x / Si strained -layer hetero structures play a primary role in the Si-based fast electronics developments of today. Real time epitaxial growth control of this alloy as well as ex situ on line characterization of the processed wafers is required. Indeed, among other techniques, spectroscopic ellipsometry (SE) corresponds to a fast and non destructive one as compared to SIMS and/or XRD analysis. Ellipsometric studies of heterostructure-base-transistor (HBT) , with either graded or abrupt profiles are reported. The analysis is based on optical databases of indices currently provided in the literature for relaxed material. Within the case of strained pseudomorphic structures, using a calibration procedure to access the real x alloy composition, the in-depth variation x can be determined even with the presence of a silicon capping layer. Good results are obtained for dummy load test wafers as well as for patterned processed wafers where to analyze areas such small as 30x30 microns is needed. This work has been carried out within the GRESSI consortium between CEA-LETI and France TELECOM-CNET 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200925 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| format | Artículo científico |
| id | redalyc_94200925 |
| institution | Redalyc |
| language | en |
| publishDate | 1999 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | Spectroscopic ellipsometry of SixGe1 x / Si : a tool for composition and profile analysis in strained heterostructure used in the microelectronics industry F. Ferrieu Física, Astronomía y Matemáticas SixGe1 alloys optical properties strained SiGe alloys spectroscopic ellipsometry Spectroscopic ellipsometry of SixGe1 x / Si : a tool for composition and profile analysis in strained heterostructure used in the microelectronics industry F. Ferrieu J. L. Regolini Física, Astronomía y Matemáticas SixGe1 alloys optical properties strained SiGe alloys spectroscopic ellipsometry SixGe1-x / Si strained -layer hetero structures play a primary role in the Si-based fast electronics developments of today. Real time epitaxial growth control of this alloy as well as ex situ on line characterization of the processed wafers is required. Indeed, among other techniques, spectroscopic ellipsometry (SE) corresponds to a fast and non destructive one as compared to SIMS and/or XRD analysis. Ellipsometric studies of heterostructure-base-transistor (HBT) , with either graded or abrupt profiles are reported. The analysis is based on optical databases of indices currently provided in the literature for relaxed material. Within the case of strained pseudomorphic structures, using a calibration procedure to access the real x alloy composition, the in-depth variation x can be determined even with the presence of a silicon capping layer. Good results are obtained for dummy load test wafers as well as for patterned processed wafers where to analyze areas such small as 30x30 microns is needed. This work has been carried out within the GRESSI consortium between CEA-LETI and France TELECOM-CNET 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200925 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| title | Spectroscopic ellipsometry of SixGe1 x / Si : a tool for composition and profile analysis in strained heterostructure used in the microelectronics industry |
| topic | Física, Astronomía y Matemáticas SixGe1 alloys optical properties strained SiGe alloys spectroscopic ellipsometry |
| url | https://www.redalyc.org/articulo.oa?id=94200925 |