Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Artículo científico |
| Sprache: | en |
| Veröffentlicht: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
|
| Schlagworte: | |
| Online-Zugang: | https://www.redalyc.org/articulo.oa?id=94200928 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Inhaltsangabe:
- Formation of electrical conductive hard-carbon (DLC) films using i C4H10/N2 supermagnetron plasma Jun Takahashi Haruhisa Kinoshita Takuya Hando Física, Astronomía y Matemáticas Electrical conductive hard-carbon (DLC) films were formed by using a supennagnetron plasma CVD method. Using mixed gas ofisobutane (i-C4H10) and N, DLC films were deposited on thermally oxidized Si wafers, and film deposition rate, hardness and resistivity were measured. Two rf powers of the same frequency (13.56 MHz) with rf phase difference of 180° were supplied to each electrode. The lowest resistivity of 1.7xl0³ cm was observed at N concentration of 70%, gas pressure of 50 mTon; electrode temperature of 80°C, and rf powers of 900 W/ 900W. In this case, measured film deposition rate and hardness were 2300Å/min and 1700 kg/mm², respectively 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200928 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9