Effects of the methane content on the characteristics of diamond like carbon films produced by sputtering

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Autor principal: R.D. Mansano
Formato: Artículo científico
Lenguaje:en
Publicado: Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. 1999
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author R.D. Mansano
author_facet R.D. Mansano
contents Effects of the methane content on the characteristics of diamond like carbon films produced by sputtering R.D. Mansano P. Verdonck P.M. Nogueira L.S. Zambom H.S. Maciel C. Otani M. Massi Física, Astronomía y Matemáticas In this work, hydrogenated carbon films were sputter deposited at low temperatures using different Ar-CH4 mixtures. The deposition rate of the films increases with up to a factor of 6 when comparing a CH4 rich mixture to a pure Ar plasma. At the same time, the sp3 carbon content is much higher when CH4 is added to the Ar, and as a consequence the resistivity increases, with approximately 6 orders of magnitude, and the breakdown electric field increases with approximately a factor of 3. Another attractive feature of the films deposited with a CH4 rich plasma, is the low dielectric constant, down to 1.8 for a pure CH4 plasma. The RMS roughness of a 1 micrometer thick film is as low as 1.6 nm. All these features make this technique interesting for depositing intermetallic layers 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200929 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9
format Artículo científico
id redalyc_94200929
institution Redalyc
language en
publishDate 1999
publisher Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
spellingShingle Effects of the methane content on the characteristics of diamond like carbon films produced by sputtering
R.D. Mansano
Física, Astronomía y Matemáticas
Effects of the methane content on the characteristics of diamond like carbon films produced by sputtering R.D. Mansano P. Verdonck P.M. Nogueira L.S. Zambom H.S. Maciel C. Otani M. Massi Física, Astronomía y Matemáticas In this work, hydrogenated carbon films were sputter deposited at low temperatures using different Ar-CH4 mixtures. The deposition rate of the films increases with up to a factor of 6 when comparing a CH4 rich mixture to a pure Ar plasma. At the same time, the sp3 carbon content is much higher when CH4 is added to the Ar, and as a consequence the resistivity increases, with approximately 6 orders of magnitude, and the breakdown electric field increases with approximately a factor of 3. Another attractive feature of the films deposited with a CH4 rich plasma, is the low dielectric constant, down to 1.8 for a pure CH4 plasma. The RMS roughness of a 1 micrometer thick film is as low as 1.6 nm. All these features make this technique interesting for depositing intermetallic layers 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200929 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9
title Effects of the methane content on the characteristics of diamond like carbon films produced by sputtering
topic Física, Astronomía y Matemáticas
url https://www.redalyc.org/articulo.oa?id=94200929