Formation Process and Material Properties of Reactive Sputtered IrO2 Thin Films
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| Format: | Artículo científico |
| Sprache: | en |
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| _version_ | 1876485398278963200 |
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| author | R. H. Horng |
| author_facet | R. H. Horng |
| contents | Formation Process and Material Properties of Reactive Sputtered IrO2 Thin Films R. H. Horng D. S. Wuu L. H. Wu M. K. Lee Física, Astronomía y Matemáticas IrO2 thin films were deposited by reactive sputtering in various O2 (O2+Ar) mixing ratios (OMR). The formation of IrO2 could be classified into two classes as depending on the O2 flow ratio. At low OMR (10 ~30%), the Ir target and Si substrate are not oxidized and high deposition rate and high crystallinity IrO2 can be obtained. At high OMR (> 30%), the target and Si substrate were oxidized. It results in a lower deposition rate of IrO2 and yields poor structural properties. Moreover, the high OMR will provide excess O atoms incorporated into IrO2, and it makes the resistivity of IrO2 increase as the samples prepared at high OMR. On the other hand, the resistivity of the IrO2 films decreased with an increase of the substrate temperature and a minimum resistivity of 70 mWcm was obtained as films deposited at 600 oC using 10% OMR 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200936 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| format | Artículo científico |
| id | redalyc_94200936 |
| institution | Redalyc |
| language | en |
| publishDate | 1999 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | Formation Process and Material Properties of Reactive Sputtered IrO2 Thin Films R. H. Horng Física, Astronomía y Matemáticas Formation Process and Material Properties of Reactive Sputtered IrO2 Thin Films R. H. Horng D. S. Wuu L. H. Wu M. K. Lee Física, Astronomía y Matemáticas IrO2 thin films were deposited by reactive sputtering in various O2 (O2+Ar) mixing ratios (OMR). The formation of IrO2 could be classified into two classes as depending on the O2 flow ratio. At low OMR (10 ~30%), the Ir target and Si substrate are not oxidized and high deposition rate and high crystallinity IrO2 can be obtained. At high OMR (> 30%), the target and Si substrate were oxidized. It results in a lower deposition rate of IrO2 and yields poor structural properties. Moreover, the high OMR will provide excess O atoms incorporated into IrO2, and it makes the resistivity of IrO2 increase as the samples prepared at high OMR. On the other hand, the resistivity of the IrO2 films decreased with an increase of the substrate temperature and a minimum resistivity of 70 mWcm was obtained as films deposited at 600 oC using 10% OMR 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200936 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| title | Formation Process and Material Properties of Reactive Sputtered IrO2 Thin Films |
| topic | Física, Astronomía y Matemáticas |
| url | https://www.redalyc.org/articulo.oa?id=94200936 |