Ferroelectric Ba1-xSrxTiO3 Thin Films for DRAMs Applications
Fuente:
Redalyc
Saved in:
| Main Author: | |
|---|---|
| Format: | Artículo científico |
| Language: | en |
| Published: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1876428680387887104 |
|---|---|
| author | G.A. Hirata |
| author_facet | G.A. Hirata |
| contents | Ferroelectric Ba1-xSrxTiO3 Thin Films for DRAMs Applications G.A. Hirata L.L. López J. M. Siqueiros J. McKittrick Física, Astronomía y Matemáticas ferroelectric films pulsed laser ablation Ferroelectric Ba1-xSrxTiO3 thin films were deposited by pulsed laser ablation on SiO2/Si, RuO2/Ta/SiO2/Si and Pt/Ti/SiO2/Si substrates. The films were weakly crystalline in the as deposited condition and subsequent crystallization was induced by annealing the films in the range of 550-650ºC. The BST films deposited on Pt/Ti/SiO2/c-Si substrates presented wide cracks that were promoted during the annealing process due to the thermal expansion mismatch between the BST films (aBST = 4 x 10-6 ºC-1) and the Pt (aPt = 9 x 10-6 ºC-1). Smooth films showing slightly crackeded areas were obtained on SiO2/c-Si and RuO2/Ta/SiO2/Si substrates. The ruthenium oxide thermal expansion coefficient is aRuO2 = 5.2 x 10-6 ºC-1. A cross-sectional analysis at the ferroelectric/substrate interface showed that for the lower annealing temperature (550ºC) a mixed amorphous/nanocrystalline microstructure is formed. For temperatures above 600ºC a randomly oriented polycrystalline material is obtained. However, an amorphous layer of 4-6 nm still remains on the substrate even after heat-treatments up to 650ºC. The dielectric constant of the BST films varied in the range of 30-325 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200938 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| format | Artículo científico |
| id | redalyc_94200938 |
| institution | Redalyc |
| language | en |
| publishDate | 1999 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | Ferroelectric Ba1-xSrxTiO3 Thin Films for DRAMs Applications G.A. Hirata Física, Astronomía y Matemáticas ferroelectric films pulsed laser ablation Ferroelectric Ba1-xSrxTiO3 Thin Films for DRAMs Applications G.A. Hirata L.L. López J. M. Siqueiros J. McKittrick Física, Astronomía y Matemáticas ferroelectric films pulsed laser ablation Ferroelectric Ba1-xSrxTiO3 thin films were deposited by pulsed laser ablation on SiO2/Si, RuO2/Ta/SiO2/Si and Pt/Ti/SiO2/Si substrates. The films were weakly crystalline in the as deposited condition and subsequent crystallization was induced by annealing the films in the range of 550-650ºC. The BST films deposited on Pt/Ti/SiO2/c-Si substrates presented wide cracks that were promoted during the annealing process due to the thermal expansion mismatch between the BST films (aBST = 4 x 10-6 ºC-1) and the Pt (aPt = 9 x 10-6 ºC-1). Smooth films showing slightly crackeded areas were obtained on SiO2/c-Si and RuO2/Ta/SiO2/Si substrates. The ruthenium oxide thermal expansion coefficient is aRuO2 = 5.2 x 10-6 ºC-1. A cross-sectional analysis at the ferroelectric/substrate interface showed that for the lower annealing temperature (550ºC) a mixed amorphous/nanocrystalline microstructure is formed. For temperatures above 600ºC a randomly oriented polycrystalline material is obtained. However, an amorphous layer of 4-6 nm still remains on the substrate even after heat-treatments up to 650ºC. The dielectric constant of the BST films varied in the range of 30-325 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200938 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| title | Ferroelectric Ba1-xSrxTiO3 Thin Films for DRAMs Applications |
| topic | Física, Astronomía y Matemáticas ferroelectric films pulsed laser ablation |
| url | https://www.redalyc.org/articulo.oa?id=94200938 |