Salvato in:
| Autore principale: | |
|---|---|
| Natura: | Artículo científico |
| Lingua: | en |
| Pubblicazione: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
|
| Soggetti: | |
| Accesso online: | https://www.redalyc.org/articulo.oa?id=94200939 |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
|
Sommario:
- Characteristics of the PLT Thin Films with Various Pb/La Ratios Seong Jun Kang Dong Hoon Chang Yung Sup Yoon Física, Astronomía y Matemáticas DRAM NVFRAM fatigue hysteresis paraelectric We have studied the fatigue and dielectric properties of the PLT thin films with varying the La concentration. The fatigue and the dielectric properties improveremarkably with the increase of La concentration from 5 to 28mol%. In particular, after applying of 109 square pulses with ±5V, the remanent polarization of the PLT(10) thin film decreases only about 20% from the initial state while that of the PLT(5) thin film decreases as much as 70%. Our results show that PL (10) and PLT(28) thin films are potential candidates for the capacitor dielectrics of new generation of NVFRAM and DRAM, respectively 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200939 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9