Growth of Pb(Zr0.53Ti0.47)O3 thin films on (111) silicon substrates
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| Format: | Artículo científico |
| Langue: | en |
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| _version_ | 1876466826905387008 |
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| author | O. Blanco |
| author_facet | O. Blanco |
| contents | Growth of Pb(Zr0.53Ti0.47)O3 thin films on (111) silicon substrates O. Blanco A. G. Castellanos Guzmán J.L. Heiras Física, Astronomía y Matemáticas PZT SEM XRD thin films sputtering Pb(Zr0.53Ti0.47)O3 thin films were successfully grown on (111) silicon substrates by a high oxygen pressure RF sputtering technique which is used for the preparation of high Tc superconductors (HTS) thin films. Intermediate Ti and Al layers were evaporated on the (111) oxidized Si wafers and then subjected to an annealing processes in a furnace at 500ºC, 550ºC and 600ºC, for 5 hours before the ferroelectric thin film was deposited. The influence of the substrate preparation and deposition conditions on the structural properties of these films were examined by scanning electron microscopy (SEM) and x-ray diffraction (XRD) analysis 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200942 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| format | Artículo científico |
| id | redalyc_94200942 |
| institution | Redalyc |
| language | en |
| publishDate | 1999 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | Growth of Pb(Zr0.53Ti0.47)O3 thin films on (111) silicon substrates O. Blanco Física, Astronomía y Matemáticas PZT SEM XRD thin films sputtering Growth of Pb(Zr0.53Ti0.47)O3 thin films on (111) silicon substrates O. Blanco A. G. Castellanos Guzmán J.L. Heiras Física, Astronomía y Matemáticas PZT SEM XRD thin films sputtering Pb(Zr0.53Ti0.47)O3 thin films were successfully grown on (111) silicon substrates by a high oxygen pressure RF sputtering technique which is used for the preparation of high Tc superconductors (HTS) thin films. Intermediate Ti and Al layers were evaporated on the (111) oxidized Si wafers and then subjected to an annealing processes in a furnace at 500ºC, 550ºC and 600ºC, for 5 hours before the ferroelectric thin film was deposited. The influence of the substrate preparation and deposition conditions on the structural properties of these films were examined by scanning electron microscopy (SEM) and x-ray diffraction (XRD) analysis 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200942 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| title | Growth of Pb(Zr0.53Ti0.47)O3 thin films on (111) silicon substrates |
| topic | Física, Astronomía y Matemáticas PZT SEM XRD thin films sputtering |
| url | https://www.redalyc.org/articulo.oa?id=94200942 |