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| Natura: | Artículo científico |
| Lingua: | en |
| Pubblicazione: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| Accesso online: | https://www.redalyc.org/articulo.oa?id=94200944 |
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Sommario:
- RBS and TEM studies of strain in epitaxially grown CaF2 on Si(111) A. Tempel A. Zehe A. Ramírez Física, Astronomía y Matemáticas In recent years strained layers in epitaxial systems relevant for microelectronic applications have found increasing attention. Due to strain effects the lattice parameters in epitaxial films are changed with reference to those of the bulk material. This allows to design material combinations with new physical properties. In all such cases the strain is a result of pseudomorphic growth of an epitaxial deposit having a bulk lattice constant being different from that of the substrate. Thin CaF2 epitaxial layers were prepared onto (111)-oriented Si substrates by MBE, and investigated by means of Rutherford backscattering (RBS), ion channeling, and transmission electron microscopy (TEM). It has been found that the symmetry of the strained CaF2 films is decreased to 3 m with respect to m 3 m of the bulk material. Moiré fringes in TEM micrographs dismantle an inhomogeneous lattice misfit in the epitaxial system. A misfit value of about 1% is determined as compared to the theoretical value of 0.6% at room temperature usually considered 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200944 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9