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| Format: | Artículo científico |
| Language: | en |
| Published: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| Subjects: | |
| Online Access: | https://www.redalyc.org/articulo.oa?id=94200946 |
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Table of Contents:
- Duality MOSPN Junction in the Al/Silicon Rich Oxide/Si Structure as a Radiation Sensor P. Rosales C. Falcony M. Aceves J. Carrillo J. Carranza W. Calleja Física, Astronomía y Matemáticas Photodetectors Induced Junction Silicon Rich Oxide In this work an experimental investigation on the possibilities of using the induced PN junction as a photon detector in the Al/SRO/Si devices is done. The devices were fabricated on high resistivity silicon substrates, the silicon rich oxide Ro used was 20. The experimental results show that this device is sensitive to visible light, and that is possible in a controlled and simple manner to use the PN induced junction as a detector 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200946 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9