Electrical properties of Ir-silicide formation on p-Si(100) in ultra high vacuum
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| Natura: | Artículo científico |
| Lingua: | en |
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| _version_ | 1876454699108925440 |
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| author | C.K. Chung |
| author_facet | C.K. Chung |
| contents | Electrical properties of Ir-silicide formation on p-Si(100) in ultra high vacuum C.K. Chung J. Hwang T.H. Jaw D. S. Wuu Física, Astronomía y Matemáticas Ir silicide epitaxial ideality factor ultra high vacuum An epitaxial Ir-silicide film was grown on the top of p-Si(100) substrate at high temperature of 450 C in ultra high vacuum. The epitaxial Ir-silicide film was identified to be Ir3Si4 with four types of epitaxial modes. The average Schottky barrier height of the epitaxial Ir3Si4/p-Si(100) diode at 60 100K was determined to be 0.177 eV with an ideality factor of 1.12. In contrast, a polycrytalline IrSi/p-Si(100) diode was formed by conventional room temperature deposition and annealing at high temperatures, and its average Schottky barrier height was 0.157 eV with an ideality factor of 1.08. The difference in Schottky barrier height was attributed to the difference of phase composition and microstructure between Ir3Si4 and IrSi silicides 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200947 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| format | Artículo científico |
| id | redalyc_94200947 |
| institution | Redalyc |
| language | en |
| publishDate | 1999 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | Electrical properties of Ir-silicide formation on p-Si(100) in ultra high vacuum C.K. Chung Física, Astronomía y Matemáticas Ir silicide epitaxial ideality factor ultra high vacuum Electrical properties of Ir-silicide formation on p-Si(100) in ultra high vacuum C.K. Chung J. Hwang T.H. Jaw D. S. Wuu Física, Astronomía y Matemáticas Ir silicide epitaxial ideality factor ultra high vacuum An epitaxial Ir-silicide film was grown on the top of p-Si(100) substrate at high temperature of 450 C in ultra high vacuum. The epitaxial Ir-silicide film was identified to be Ir3Si4 with four types of epitaxial modes. The average Schottky barrier height of the epitaxial Ir3Si4/p-Si(100) diode at 60 100K was determined to be 0.177 eV with an ideality factor of 1.12. In contrast, a polycrytalline IrSi/p-Si(100) diode was formed by conventional room temperature deposition and annealing at high temperatures, and its average Schottky barrier height was 0.157 eV with an ideality factor of 1.08. The difference in Schottky barrier height was attributed to the difference of phase composition and microstructure between Ir3Si4 and IrSi silicides 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200947 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| title | Electrical properties of Ir-silicide formation on p-Si(100) in ultra high vacuum |
| topic | Física, Astronomía y Matemáticas Ir silicide epitaxial ideality factor ultra high vacuum |
| url | https://www.redalyc.org/articulo.oa?id=94200947 |