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| Format: | Artículo científico |
| Language: | en |
| Published: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| Subjects: | |
| Online Access: | https://www.redalyc.org/articulo.oa?id=94200952 |
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Table of Contents:
- Chemical Stability of Ta Diffusion Barrier Between Cu and Si T. Laurila K. Zeng J.K. Kivilahti J. Molarius I. Suni Física, Astronomía y Matemáticas The reactions in the Si/Ta/Cu metallization system produced by a sputtering process were investigated by means of sheet resistance measurements, XRD, RBS, SEM and optical microscopy. In particular, the reaction sequence was emphasised. The reaction mechanisms and their relation to the microstructure and defect density of the thin films are discussed on the basis of the experimental results and the assessed ternary Si-Ta-Cu phase diagram at 700°C. It was found out that the effectiveness of the Ta barrier is mainly governed by the defect density and their distribution in the Ta film. The failure was induced by Cu diffusion through the Ta film and almost simultaneous formation of Cu3Si and TaSi2 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200952 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9