The influence of TiB2-thinfilm thickness on metal - GaAs structural characteristics
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| Sprache: | en |
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| author | Tetyana G. Kryshtab |
| author_facet | Tetyana G. Kryshtab |
| contents | The influence of TiB2-thinfilm thickness on metal - GaAs structural characteristics Tetyana G. Kryshtab Jesus Palacios Gomez Petro M. Lytvyn Oksana S. Lytvyn Física, Astronomía y Matemáticas The X-ray diffraction and Atomic Force Microscope investigations of TiB2/GaAs as-produced and annealed device structures has been carried out. The samples were obtained by magnetron sputtering on previously photon cleaned Czochralski grown (001) GaAs substrates doped by Te up to concentration 1018cm -3 . The magnetron sputtering was carried out in the argon atmosphere at pressure in the chamber 5×10-3 torr. The currents of sputtering were 0.3 and 0.4A, and thickness of TiB2-films was from 10 nm up to 50 nm.. The samples annealing was carried out in a stream of hydrogen in the furnace at temperatures 400, 600, and 800 °C during 1 minute with heating velocity of 1800°C/min. It was shown that film thickness and magnetron sputtering current determines the film surface and interface structural parameters as well as a features of processes of structural relaxation under short-term thermal annealing 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200955 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| format | Artículo científico |
| id | redalyc_94200955 |
| institution | Redalyc |
| language | en |
| publishDate | 1999 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | The influence of TiB2-thinfilm thickness on metal - GaAs structural characteristics Tetyana G. Kryshtab Física, Astronomía y Matemáticas The influence of TiB2-thinfilm thickness on metal - GaAs structural characteristics Tetyana G. Kryshtab Jesus Palacios Gomez Petro M. Lytvyn Oksana S. Lytvyn Física, Astronomía y Matemáticas The X-ray diffraction and Atomic Force Microscope investigations of TiB2/GaAs as-produced and annealed device structures has been carried out. The samples were obtained by magnetron sputtering on previously photon cleaned Czochralski grown (001) GaAs substrates doped by Te up to concentration 1018cm -3 . The magnetron sputtering was carried out in the argon atmosphere at pressure in the chamber 5×10-3 torr. The currents of sputtering were 0.3 and 0.4A, and thickness of TiB2-films was from 10 nm up to 50 nm.. The samples annealing was carried out in a stream of hydrogen in the furnace at temperatures 400, 600, and 800 °C during 1 minute with heating velocity of 1800°C/min. It was shown that film thickness and magnetron sputtering current determines the film surface and interface structural parameters as well as a features of processes of structural relaxation under short-term thermal annealing 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200955 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| title | The influence of TiB2-thinfilm thickness on metal - GaAs structural characteristics |
| topic | Física, Astronomía y Matemáticas |
| url | https://www.redalyc.org/articulo.oa?id=94200955 |