Capacitance Variations in Cd3As2 Thin Film Sandwich Structures
Fuente:
Redalyc
Enregistré dans:
| Auteur principal: | |
|---|---|
| Format: | Artículo científico |
| Langue: | en |
| Publié: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
|
| Sujets: | |
| Accès en ligne: | |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
| _version_ | 1876480771937533952 |
|---|---|
| author | M. Din |
| author_facet | M. Din |
| contents | Capacitance Variations in Cd3As2 Thin Film Sandwich Structures M. Din R.D. Gould Física, Astronomía y Matemáticas Cadmium arsenide capacitance variations equivalent circuit model Cadmium arsenide (Cd3As2) is a high conductivity II-V semiconductor. Following a recent dc investigation, capacitance has been measured as a function of film thickness, temperature (163 - 453 K), and frequency (100 Hz - 20 kHz) in Ag-Cd3As2-Al structures. There was a decrease with frequency and an increase with temperature, as reported in various other materials. After annealing at 473 K the decrease in capacitance with frequency was enhanced due to concomitant changes in the equivalent circuit parameters, whereas unannealed Ag Cd3As2-(Au or Ag) structures showed reduced capacitance, ascribed to changes in the contact impedance 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200960 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| format | Artículo científico |
| id | redalyc_94200960 |
| institution | Redalyc |
| language | en |
| publishDate | 1999 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | Capacitance Variations in Cd3As2 Thin Film Sandwich Structures M. Din Física, Astronomía y Matemáticas Cadmium arsenide capacitance variations equivalent circuit model Capacitance Variations in Cd3As2 Thin Film Sandwich Structures M. Din R.D. Gould Física, Astronomía y Matemáticas Cadmium arsenide capacitance variations equivalent circuit model Cadmium arsenide (Cd3As2) is a high conductivity II-V semiconductor. Following a recent dc investigation, capacitance has been measured as a function of film thickness, temperature (163 - 453 K), and frequency (100 Hz - 20 kHz) in Ag-Cd3As2-Al structures. There was a decrease with frequency and an increase with temperature, as reported in various other materials. After annealing at 473 K the decrease in capacitance with frequency was enhanced due to concomitant changes in the equivalent circuit parameters, whereas unannealed Ag Cd3As2-(Au or Ag) structures showed reduced capacitance, ascribed to changes in the contact impedance 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200960 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| title | Capacitance Variations in Cd3As2 Thin Film Sandwich Structures |
| topic | Física, Astronomía y Matemáticas Cadmium arsenide capacitance variations equivalent circuit model |
| url | https://www.redalyc.org/articulo.oa?id=94200960 |