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| Format: | Artículo científico |
| Language: | en |
| Published: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| Online Access: | https://www.redalyc.org/articulo.oa?id=94200963 |
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| _version_ | 1866573512964046848 |
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| author | M. Maeder |
| author_facet | M. Maeder |
| contents | A RHEED study of as-received and atomically clean Silicon surfaces in UHV-environment M. Maeder A. Zehe A. Ramírez Física, Astronomía y Matemáticas Surface reconstruction of {111}- and {100}- oriented silicon is studied. Decontamination by ex situ chemical processes and in situ thermal treatment is a key requirement for a controlled reconstruction to be observed. Only after a high temperature annealing at 1200 °C for several minutes was the (7x7) and (2x1) reconstruction obtained, which we explain by SiC desorption. Once generated the reconstruction stays stable for a long time even at increased gas pressure in the UHV chamber 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200963 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| format | Artículo científico |
| id | redalyc_94200963 |
| language | en |
| publishDate | 1999 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | A RHEED study of as-received and atomically clean Silicon surfaces in UHV-environment M. Maeder Física, Astronomía y Matemáticas A RHEED study of as-received and atomically clean Silicon surfaces in UHV-environment M. Maeder A. Zehe A. Ramírez Física, Astronomía y Matemáticas Surface reconstruction of {111}- and {100}- oriented silicon is studied. Decontamination by ex situ chemical processes and in situ thermal treatment is a key requirement for a controlled reconstruction to be observed. Only after a high temperature annealing at 1200 °C for several minutes was the (7x7) and (2x1) reconstruction obtained, which we explain by SiC desorption. Once generated the reconstruction stays stable for a long time even at increased gas pressure in the UHV chamber 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200963 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| title | A RHEED study of as-received and atomically clean Silicon surfaces in UHV-environment |
| topic | Física, Astronomía y Matemáticas |
| url | https://www.redalyc.org/articulo.oa?id=94200963 |