Saved in:
| Main Author: | |
|---|---|
| Format: | Artículo científico |
| Language: | en |
| Published: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
|
| Subjects: | |
| Online Access: | https://www.redalyc.org/articulo.oa?id=94200963 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Table of Contents:
- A RHEED study of as-received and atomically clean Silicon surfaces in UHV-environment M. Maeder A. Zehe A. Ramírez Física, Astronomía y Matemáticas Surface reconstruction of {111}- and {100}- oriented silicon is studied. Decontamination by ex situ chemical processes and in situ thermal treatment is a key requirement for a controlled reconstruction to be observed. Only after a high temperature annealing at 1200 °C for several minutes was the (7x7) and (2x1) reconstruction obtained, which we explain by SiC desorption. Once generated the reconstruction stays stable for a long time even at increased gas pressure in the UHV chamber 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200963 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9