Effect of a III-V buffer layer on the quality of ZnSe thin films grown by MBE on GaAs substrates
Fuente:
Redalyc
Guardado en:
| Autor principal: | |
|---|---|
| Formato: | Artículo científico |
| Lenguaje: | en |
| Publicado: |
Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
|
| Materias: | |
| Acceso en línea: | |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| _version_ | 1876436842912415744 |
|---|---|
| author | M. Meléndez Lira |
| author_facet | M. Meléndez Lira |
| contents | Effect of a III-V buffer layer on the quality of ZnSe thin films grown by MBE on GaAs substrates M. Meléndez Lira M. A. Vidal M. A. Santana Aranda J. Luyo Alvarado V. H. Méndez H. Yonezu M. López López Física, Astronomía y Matemáticas In this work we present a study of ZnSe films grown on buffer layers of the ternary compounds InxGa1-xAs and AlxGa1- xAs by means of photoreflectance (PR), and photoluminescence (PL) spectroscopies and transmission electron microscopy (TEM) . The buffer layers of the ternary compounds were grown by molecular beam epitaxy (MBE) employing concentrations with 0.01 < x < 0.3 and thickness of 5000 Å. The films of ZnSe were grown by MBE in a separate II-VI system with a thickness of 6000 Å. The measurements of PR allowed us to determine the energy value of the ZnSe band gap, the magnitude of the internal electric fields, and to evaluate the quality of the buffer layers and the ZnSe film. The intensity and width of the excitonic related peaks in the PL spectra and the presence of lines related with defects allowed us to asses the crystalline quality of the films. TEM results have a good correlation with the optical spectroscopies showing that the better samples are those grown on buffer layers of Al0.01Ga0.99As and In0.01Ga0.99As 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200966 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| format | Artículo científico |
| id | redalyc_94200966 |
| institution | Redalyc |
| language | en |
| publishDate | 1999 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | Effect of a III-V buffer layer on the quality of ZnSe thin films grown by MBE on GaAs substrates M. Meléndez Lira Física, Astronomía y Matemáticas Effect of a III-V buffer layer on the quality of ZnSe thin films grown by MBE on GaAs substrates M. Meléndez Lira M. A. Vidal M. A. Santana Aranda J. Luyo Alvarado V. H. Méndez H. Yonezu M. López López Física, Astronomía y Matemáticas In this work we present a study of ZnSe films grown on buffer layers of the ternary compounds InxGa1-xAs and AlxGa1- xAs by means of photoreflectance (PR), and photoluminescence (PL) spectroscopies and transmission electron microscopy (TEM) . The buffer layers of the ternary compounds were grown by molecular beam epitaxy (MBE) employing concentrations with 0.01 < x < 0.3 and thickness of 5000 Å. The films of ZnSe were grown by MBE in a separate II-VI system with a thickness of 6000 Å. The measurements of PR allowed us to determine the energy value of the ZnSe band gap, the magnitude of the internal electric fields, and to evaluate the quality of the buffer layers and the ZnSe film. The intensity and width of the excitonic related peaks in the PL spectra and the presence of lines related with defects allowed us to asses the crystalline quality of the films. TEM results have a good correlation with the optical spectroscopies showing that the better samples are those grown on buffer layers of Al0.01Ga0.99As and In0.01Ga0.99As 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200966 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| title | Effect of a III-V buffer layer on the quality of ZnSe thin films grown by MBE on GaAs substrates |
| topic | Física, Astronomía y Matemáticas |
| url | https://www.redalyc.org/articulo.oa?id=94200966 |