Application of optical scatterometry to microstructure changes of Si1 xGex/Si heterostructures grown by gas source molecular beam epitaxy
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| Format: | Artículo científico |
| Sprache: | en |
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Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C.
1999
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| _version_ | 1876448568633458688 |
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| author | L.F. Zou |
| author_facet | L.F. Zou |
| contents | Application of optical scatterometry to microstructure changes of Si1 xGex/Si heterostructures grown by gas source molecular beam epitaxy L.F. Zou S.E. Acosta Ortiz G.A. Perez Herrera L.E. Regalado LuXin Zou J. Sarabia Torres Física, Astronomía y Matemáticas The microstructure changes of Si1 xGex/Si heterostructures grown by gas source molecular epitaxy (GSMBE) were investigated by the scatterometer with angle-resolved scattering. Experimental results show that the microstructure changes with different strain distributions in pseudomorphic layers affect the surfaces of Si1-xGex/Si heterostructures, which leads to different scattering profiles. The surfaces of heterostructures grown under different growth conditions are microrough to different degree and surface quality of epilayers has a closed connection with the growth parameters and growth modes in the heteroepitaxy 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200967 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| format | Artículo científico |
| id | redalyc_94200967 |
| institution | Redalyc |
| language | en |
| publishDate | 1999 |
| publisher | Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. |
| spellingShingle | Application of optical scatterometry to microstructure changes of Si1 xGex/Si heterostructures grown by gas source molecular beam epitaxy L.F. Zou Física, Astronomía y Matemáticas Application of optical scatterometry to microstructure changes of Si1 xGex/Si heterostructures grown by gas source molecular beam epitaxy L.F. Zou S.E. Acosta Ortiz G.A. Perez Herrera L.E. Regalado LuXin Zou J. Sarabia Torres Física, Astronomía y Matemáticas The microstructure changes of Si1 xGex/Si heterostructures grown by gas source molecular epitaxy (GSMBE) were investigated by the scatterometer with angle-resolved scattering. Experimental results show that the microstructure changes with different strain distributions in pseudomorphic layers affect the surfaces of Si1-xGex/Si heterostructures, which leads to different scattering profiles. The surfaces of heterostructures grown under different growth conditions are microrough to different degree and surface quality of epilayers has a closed connection with the growth parameters and growth modes in the heteroepitaxy 1999 artículo científico 1665-3521 https://www.redalyc.org/articulo.oa?id=94200967 en http://www.redalyc.org/revista.oa?id=942 Superficies y vacío application/pdf Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. Superficies y vacío (México) Num.9 |
| title | Application of optical scatterometry to microstructure changes of Si1 xGex/Si heterostructures grown by gas source molecular beam epitaxy |
| topic | Física, Astronomía y Matemáticas |
| url | https://www.redalyc.org/articulo.oa?id=94200967 |